jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Feb 2012

Volume 111, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

J. Appl. Phys. 111, 043501 (2012); http://dx.doi.org/10.1063/1.3680881 (8 pages)

Gregory J. McGraw and Stephen R. Forrest
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer

F. K. Tutu, I. R. Sellers, M. G. Peinado, C. E. Pastore, S. M. Willis, A. R. Watt, T. Wang, and H. Y. Liu

J. Appl. Phys. 111, 046101 (2012); http://dx.doi.org/10.1063/1.3686184 (3 pages) | Cited 2 times

Online Publication Date: 16 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510 °C). The formation of threading dislocations is suppressed by growing the GaAs spacer layer at high temperature (580 °C), leading to enhanced quantum-dot optical and structural characteristics. Incorporation of the high-growth-temperature GaAs spacer layers into a 30-layer InAs/GaAs quantum-dot solar cell results in a dramatic increase in the short-circuit current compared to the one without the high-growth-temperature spacer layers and an increase in the short-circuit current compared to the reference GaAs solar cell.
Show PACS
88.40.J- Types of solar cells

Green and red emission for (K0.5Na0.5)NbO3:Pr ceramics

Haiqin Sun, Dengfeng Peng, Xusheng Wang, Mianmian Tang, Qiwei Zhang, and Xi Yao

J. Appl. Phys. 111, 046102 (2012); http://dx.doi.org/10.1063/1.3686193 (3 pages) | Cited 3 times

Online Publication Date: 17 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The photoluminescence properties of Pr-doped K0.5Na0.5NbO3 (KNN) ceramics were prepared by the solid-state reaction method and investigated as a function of Pr concentration and sintering temperature. The excitation band ranging from 430 to 500 nm covers the emission wavelength of all commercial blue light-emitting diode chips. The photoluminescence spectra of KNN:Pr exhibit strong green (528 nm) and red (617 nm and 650 nm) emissions. The optimum doping concentration of Pr in KNN is 0.5 mol. %, and the optimized sintering temperature is 1170 °C. In addition to the admirable intrinsic piezoelectric properties of KNN, Pr-doped KNN may take an important role in many fields as a multifunctional material.
Show PACS
78.55.Hx Other solid inorganic materials
78.55.Qr Amorphous materials; glasses and other disordered solids
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
61.72.up Other materials
77.84.Cg PZT ceramics and other titanates
FREE

Measurement of semiconductor surface potential using the scanning electron microscope

Jennifer T. Heath, Chun-Sheng Jiang, and Mowafak M. Al-Jassim

J. Appl. Phys. 111, 046103 (2012); http://dx.doi.org/10.1063/1.3684556 (3 pages) | Cited 2 times

Online Publication Date: 21 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, yielding an image of the surface or near-surface potential. Data on both atomically abrupt heterojunction GaInP/GaAs and diffused homojunction Si solar cell devices clearly show the expected variation in potential with position and applied bias, giving depletion widths and locating metallurgical junctions to an accuracy better than 10 nm. In some images, distortion near the p-n junction is observed, seemingly consistent with the effects of lateral electric fields (patch fields). Reducing the tube bias removes this distortion. This approach results in rapid and straightforward collection of near-surface potential data using a standard scanning electron microscope.
Show PACS
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
88.40.jj Silicon solar cells
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close