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Journal of Applied Physics / Volume 111 / Issue 3 / ARTICLES / Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

J. Appl. Phys. 111, 033510 (2012); http://dx.doi.org/10.1063/1.3681329 (4 pages)

The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots

M. Molas1, K. Gołasa1, K. Kuldová2, J. Borysiuk1, A. Babiński1, J. Lapointe3, and Z. R. Wasilewski3

1Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw, Poland
2Institute of Physics of the AS CR, Cukrovarnická 10/112, CZ-162 00 Praha 6, Czech Republic
3Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario K1A 0R6, Canada

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(Received 5 May 2011; accepted 7 January 2012; published online 6 February 2012)

The effect of the In-flush technique on the optical anisotropy of InAs/GaAs quantum dots (QDs) has been investigated. The anisotropy was deduced from low temperature microluminescence measurements of the splitting of the emission lines related to single neutral excitons confined to the QDs. It was found that the anisotropy was significantly smaller in a structure grown by the In-flush technique as compared to a structure grown without this procedure. It is proposed that this anisotropy reduction is due to the reduction in the strain generated within the GaAs barrier when using the In-flush procedure.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. SAMPLES AND EXPERIMENTAL SETUP
  3. EXPERIMENTAL RESULTS AND DISCUSSION
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum dots

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3681329

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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