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Journal of Applied Physics / Volume 111 / Issue 2 / ARTICLES / Nanoscale Science and Design

J. Appl. Phys. 111, 024310 (2012); http://dx.doi.org/10.1063/1.3677952 (7 pages)

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate

M. Bennour, F. Saidi, L. Bouzaïene, L. Sfaxi, and H. Maaref

Laboratoire de Micro-Optoélectronique et Nanostructures, Département de Physique, Faculté des Sciences, Université de Monastir, Avenue de l’environnement, 5019 Monastir, Tunisia

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(Received 27 September 2011; accepted 18 December 2011; published online 25 January 2012)

We present a study of the optical properties of InAs self-assembled nanostructures grown by molecular beam epitaxy on GaAs(11N)A substrates (N = 3–5). Photoluminescence (PL) measurements revealed good optical properties of InAs quantum dots (QDs) grown on GaAs(115)A compared to those grown on GaAs(113)A and (114)A orientations substrate. An additional peak localized at 1.39 eV has been shown on PL spectra of both GaAs(114)A and (113)A samples. This peak persists even at lower power density. Supporting on the polarized photoluminescence characterization, we have attributed this additional peak to the quantum strings (QSTs) emission. A theoretical study based on the resolution of the three dimensional Schrödinger equation, using the finite element method, including strain and piezoelectric-field effect was adopted to distinguish the observed photoluminescence emission peaks. The mechanism of QDs and QSTs formation on such a high index GaAs substrates was explained in terms of piezoelectric driven atoms and the equilibrium surfaces at edges.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL DETAILS
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

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KEYWORDS, PACS, and IPC

Keywords

finite element analysis, III-V semiconductors, indium compounds, molecular beam epitaxial growth, nanofabrication, nanostructured materials, photoluminescence, Schrodinger equation, self-assembly, semiconductor quantum dots

PACS

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • C09K11/00

    Luminescent, e.g. electroluminescent, chemiluminescent, materials

  • H01L21/02

    Manufacture or treatment of semiconductor devices or of parts thereof

  • H01L21/70

    Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3677952

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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