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J. Appl. Phys. 111, 023908 (2012); http://dx.doi.org/10.1063/1.3677975 (5 pages)

Magnetic study of Cu1−xMnxO (0 ≤ x ≤ 0.08) nanoparticles

Shahzad Hussain, A. Mumtaz, S. K. Hasanain, and M. Usman

Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan

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(Received 24 September 2011; accepted 16 December 2011; published online 23 January 2012)

Cu1−xMnxO (0 ≤ x ≤ 0.08) nanoparticles were synthesized by a coprecipitation method. Powder x ray analysis reveals that samples show a pure CuO phase for x ≤ 0.06 and the appearance of a secondary phase CuMn2O4 for x > 0.06. The unit cell volume expands with increasing Mn concentration up to x = 0.06 and remains constant on further increase in Mn concentration. The undoped sample shows the behavior of pure CuO with antiferromagnetic transitions at TN1 = 228 K and TN2 = 214 K. Inclusion of Mn into the Cu sublattice turned antiferromagnetic CuO into a ferromagnet. The origin of ferromagnetism is analyzed on the basis of different possible interactions. It is believed that the indirect coupling between Mn ions mediated by O and Cu ions helps to stabilize the ferromagnetism.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. SYNTHESIS AND CHARACTERIZATION
  3. RESULTS AND DISCUSSION
  4. SUMMARY

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KEYWORDS, PACS, and IPC

PACS

  • 75.50.Tt

    Fine-particle systems; nanocrystalline materials

  • 82.80.Ej

    X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

  • 75.30.Kz

    Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 75.50.Ee

    Antiferromagnetics

  • 75.50.Pp

    Magnetic semiconductors

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • H01F1/00

    Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties

  • H01F1/40

    Of magnetic semiconductor materials, e.g. cdcr2s4

  • H01L21/02

    Manufacture or treatment of semiconductor devices or of parts thereof

  • H01L21/70

    Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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