jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Journal of Applied Physics / Volume 111 / Issue 2 / ARTICLES / Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

J. Appl. Phys. 111, 023508 (2012); http://dx.doi.org/10.1063/1.3677988 (7 pages)

Polarization-independent negative refraction effect in SiO2-GaAs annular photonic crystals

Li-Yong Jiang1, Hong Wu1, Wei Jia1,2, and Xiang-Yin Li1

1Department of Physics, Nanjing University of Science and Technology, Nanjing 210094, China
2Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom

View MapView Map

(Received 25 August 2011; accepted 15 December 2011; published online 23 January 2012)

We systematically investigated the negative refraction effect for both TM and TE polarization modes in SiO2-GaAs annular photonic crystals with triangular lattice. It was found that, in comparison with normal triangular-lattice air-holes photonic crystals, the annular photonic crystals have much lower and flatter band structures, which are quite beneficial to the formation of convex equifrequency surfaces for both polarizations. Further analyses on equifrequency surfaces and the electric field distribution of annular photonic crystals with different parameters have not only first demonstrated the possibility of polarization-independent negative refraction effect in annular photonic crystals, but also revealed some important laws to control the working frequency and performance of this remarkable effect.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. MODEL AND METHODS
  3. THE POSSIBILITY OF POLARIZATION-INDEPENDENT NEGATIVE REFRACTIVE IN NORMAL AIR-HOLES PCS
  4. THE POSSIBILITY OF POLARIZATION-INDEPENDENT NEGATIVE REFRACTIVE IN APCs
  5. SUMMARY

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, light polarisation, light refraction, photonic crystals, silicon compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3677988

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Z. Y. Li and L. L. Lin, Phys. Rev. B 68, 245110 (2003).

    A. Berrier, M. Mulot, M. Swillo, M. Qiu, L. Thylén, A. Talneau, and S. Anand, Phys. Rev. Lett. 93, 073902 (2004).

    S. Feng, Z. Y. Li, Z. F. Feng, B. Y. Cheng, and D. Z. Zhang, Phys. Rev. B 72, 075101 (2005).

    Z. F. Feng, S. Feng, Z. Y. Li, K. Ren, B. Y. Cheng, and D. Z. Zhang, J. Appl. Phys. 100, 053702 (2006)JAPIAU000100000004043718000001.

    R. Zhou, X. S. Chen, and W. Lu, Phys. Rev. E 74, 016610 (2006).

    Y. J. Huang, W. T. Lu, and S. Sridhar, Phys. Rev. A 76, 013824 (2007).

    R. Chatterjee, N. C. Panoiu, K. Liu, Z. Dios, M. B. Yu, M. T. Doan, L. J. Kaufman, R. M. Osgood, and C. W. Wong, Phys. Rev. Lett. 100, 187401 (2008).

    N. Fabre, L. Lalouat, B. Cluzel, X. Méique, D. Lippens, F. D. Fornel, and O. Vanbésien, Phys. Rev. Lett. 101, 073901 (2008).

    B. D. F. Casse, W. T. Lu, Y. J. Huang, and S. Sridhar, Appl. Phys. Lett. 93, 053111 (2008)APPLAB000093000005053111000001.

    X. D. Zhang, Phys. Rev. B 70, 205102 (2004).


Figures (8)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Polarization-independent negative refraction effect in SiO2-GaAs annular photonic crystals
  2. Kinetics of small single particle combustion of zirconium alloy
  3. Large area ceramic thin films on plastics: A versatile route via solution processing
  4. Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers
  5. Comment on “Securing special nuclear material: Recent advances in neutron detection and their role in nonproliferation” [J. Appl. Phys. 108, 111101 (2010)]
Go to AIP Home
Copyright © American Institute of Physics
close