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Journal of Applied Physics / Volume 111 / Issue 10 / ARTICLES / Device Physics

J. Appl. Phys. 111, 104509 (2012); http://dx.doi.org/10.1063/1.4719046 (9 pages)

Dual roles of doping and trapping of semiconductor defect levels and their ramification to thin film photovoltaics

Ken K. Chin

Department of Physics and Apollo CdTe Solar Energy Research Center, New Jersey Institute of Technology, Newark, New Jersey 07102, USA

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(Received 6 March 2012; accepted 8 April 2012; published online 24 May 2012)

It is pointed out that the semiconductor localized intrinsic/impurity defect levels’ dual roles for carrier doping and trapping (Shockley-Read-Hall generation-recombination) have been treated differently and inconsistently. It is proposed that instead of ionization or activation energy, transition Gibbs free energy level should be used for the dual roles of doping-trapping. To qualitatively evaluate the effectiveness of doping and of trapping, the concept of doping efficacy ηd and two types of trapping efficacy ηt and ηSRH are proposed. The relationship of ηd, ηt, and ηSRH is formulated. Various values of ηSRH for different types of defect levels are presented. General ramification of the proposed concepts and efficacy of trapping is explored for polycrystalline thin film solar cells.

© 2012 American Institute of Physics

Article Outline

  1. CONSISTENT AND CORRECT TREATMENT OF SEMICONDUCTOR DEFECT LEVELS’ DUAL ROLES
  2. INTRODUCTION OF DOPING AND TRAPPING EFFICACIES OF A DEFECT TRANSITION LEVEL
  3. GENERAL RAMIFICATION OF EFFICACY OF THE SRH TRANSITION LEVEL TO PHOTOVOLTAICS
  4. CONCLUSION AND DISCUSSION

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KEYWORDS, PACS, and IPC

Keywords

cadmium compounds, deep level transient spectroscopy, electron traps, free energy, hole traps, II-VI semiconductors, ionisation, semiconductor doping, semiconductor thin films, solar cells

PACS

  • 71.55.Gs

    II-VI semiconductors

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

  • 61.72.uj

    III-V and II-VI semiconductors

  • 88.40.jm

    Thin film III-V and II-VI based solar cells

  • 73.61.Ga

    II-VI semiconductors

International Patent Classification (IPC)

  • H01L21/02

    Manufacture or treatment of semiconductor devices or of parts thereof

  • H01L21/70

    Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof

  • H01L27/142

    Energy conversion devices

  • H01L31/04

    Adapted as conversion devices

  • H02N6/00

    Generators in which light radiation is directly converted into electrical energy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.4719046

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

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