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Journal of Applied Physics / Volume 111 / Issue 1 / COMMUNICATIONS

J. Appl. Phys. 111, 016106 (2012); http://dx.doi.org/10.1063/1.3676281 (3 pages)

Large area ceramic thin films on plastics: A versatile route via solution processing

H. Kozuka1, A. Yamano1, T. Fukui2, H. Uchiyama1, M. Takahashi1, M. Yoki2, and T. Akase2

1Faculty of Chemistry, Materials and Bioengineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680, Japan
2Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680, Japan

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(Received 12 November 2011; accepted 12 December 2011; published online 11 January 2012)

A new general route for large area, submicron thick ceramic thin films (crystalline metal oxide thin films) on plastic substrates is presented, where the crystallization of films is guaranteed by a firing process. Gel films are deposited on silicon substrates with a release layer and fired to be ceramic films, followed by transferring onto plastic substrates using adhesives. The ceramic films thus fabricated on plastics exhibit a certain degree of flexibility, implying the possibility of the technique to be applied to high-throughput roll-to-roll processes. Using this technique, we successfully realized transparent anatase thin films that provide high optical reflectance and transparent indium tin oxide thin films that exhibit electrical conductivity on polycarbonate and acrylic resin substrates, respectively. Crystallographically oriented zinc oxide films and patterned zinc oxide films are also demonstrated to be realized on acrylic resin substrates.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

ceramics, crystallisation, electrical conductivity, firing (materials), gels, II-VI semiconductors, indium compounds, reflectivity, semiconductor growth, semiconductor thin films, transparency, wide band gap semiconductors, zinc compounds

PACS

  • 81.05.Je

    Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

  • 82.70.Gg

    Gels and sols

  • 68.55.ag

    Semiconductors

  • 73.61.Ga

    II-VI semiconductors

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 78.66.Hf

    II-VI semiconductors

  • 81.05.Dz

    II-VI semiconductors

International Patent Classification (IPC)

  • B01D9/00

    Crystallisation

  • C04B

    Lime; Magnesia; Slag; Cements; Compositions thereof, e.g. mortars, concrete or like building materials; Artificial stone; Ceramics; Refractories; Treatment of natural stone

  • C04B35/00

    Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3676281

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    R. P. Howson, J. N. Avaratsiotis, M. I. Ridge, and C. A. Bishop, Appl. Phys. Lett. 35, 161 (1979)APPLAB000035000002000161000001.

    H. Kim, J. S. Horwitz, G. P. Kushto, Z. H. Kafafi, and D. B. Chrisey, Appl. Phys. Lett. 79, 284 (2001)APPLAB000079000003000284000001.


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