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Journal of Applied Physics / Volume 111 / Issue 1 / COMMUNICATIONS

J. Appl. Phys. 111, 016105 (2012); http://dx.doi.org/10.1063/1.3676266 (3 pages)

Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers

C. C. Huang1, F. J. Xu1, J. Song1, Z. Y. Xu1, J. M. Wang1, R. Zhu1, G. Chen1, X. Q. Wang1, Z. J. Yang1, B. Shen1, X. S. Chen2, and W. Lu2

1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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(Received 5 December 2011; accepted 14 December 2011; published online 10 January 2012)

Strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells (MQWs) grown on GaN/sapphire templates with either AlN/GaN supperlattices (SLs) or low-temperature AlN (LT-AlN) interlayers (ILs) between the MQWs and templates have been investigated. These two IL techniques can both effectively relieve the tensile strain in the MQWs, leading to crack-free surfaces and high crystalline quality. Further analysis shows that there are two distinct strain relief channels. In the case of adopting AlN/GaN SLs IL, microcracks and misfit dislocations account for strain relief in the MQWs. Microcracks are first generated in the IL, followed by activating formation of misfit dislocations. Then, the microcracks are immediately filled up by the subsequent epilayers. Contrastively, strain relief by using LT-AlN IL is mainly through the self relaxation process of the MQWs by surface roughening and strain compensation effect of LT-AlN IL.

© 2012 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, dislocations, gallium compounds, III-V semiconductors, microcracks, MOCVD, semiconductor growth, semiconductor quantum wells, semiconductor superlattices, surface cracks, surface roughness, tensile strength, wide band gap semiconductors

PACS

  • 81.40.Lm

    Deformation, plasticity, and creep

  • 62.20.F-

    Deformation and plasticity

  • 62.20.mt

    Cracks

  • 61.72.Hh

    Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3676266

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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