Spin-dependent recombination in Czochralski silicon containing oxide precipitates

Lang, V.; Murphy, J. D.; Falster, R. J.; Morton, J. J. L.

doi:doi:10.1063/1.3675449

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How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?

A simple critical thickness for generating lattice misfits is insufficient to describe the onset strain relaxation in InAs quantum dots (QDs). A predominant dot family is shown to relieve its strain by In/Ga interdiffusion, rather than by lattice misfits, at the onset of strain relaxation. This argument is based on photoluminescence spectra, which show the emergence of a fine blueshifted transition at the onset of strain relaxation, along with a low-energy transition from a dot family degraded ...

Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN

Both the electron relaxation process and the transport property of wurtzite InN have been investigated using an ensemble Monte Carlo method. The band structure of the classic three valleys model is adopted, and the anisotropy of the band structure by Herring-Volt transform is also taken into consideration. The peak velocity in the Γ-A direction (c-direction) is higher than that in the Γ-M direction (basal plane), and the onset of negative differential mobility (NDM) appears at relatively lower ...

Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski-grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~1×10⁹ cm^-3 to ~7×10¹⁰ cm^-3). Measurements reveal that photo-excited charge carriers recombine through P_b0 and P_b1 dangling bonds, and comparison to precipitate-free material indicates that these are present at both the sample surface and the oxide precipitates. The electronic recombination rates vary approximately linearly with precipitate density. Additional resonance lines arising from iron-boron and interstitial iron are observed and discussed. Our observations are inconsistent with bolometric heating and interpreted in terms of spin-dependent recombination. Electrically detected magnetic resonance is thus a very powerful and sensitive spectroscopic technique to selectively probe recombination centers in modern photovoltaic device materials.

Article Outline

INTRODUCTION
EXPERIMENTAL METHODS
1. Growth of oxide precipitates
2. Iron: Concentration measurement and contamination
3. EDMR experiments
RESULTS
1. FeB pair and interstitial Fe
2. P_b0 and P_b1 dangling bonds
3. Influence of OP density on recombination time
DISCUSSION
SUMMARY

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KEYWORDS and PACS

Keywords

crystal growth from melt, dangling bonds, electron-hole recombination, elemental semiconductors, interstitials, magnetic resonance, precipitation (physical chemistry), silicon

PACS

81.10.Fq

Growth from melts; zone melting and refining
72.80.Cw

Elemental semiconductors
81.05.Cy

Elemental semiconductors
72.20.Jv

Charge carriers: generation, recombination, lifetime, and trapping
61.72.jj

Interstitials

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3675449

PUBLICATION DATA

ISSN

0021-8979 (print)

1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

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