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J. Appl. Phys. 110, 083719 (2011); http://dx.doi.org/10.1063/1.3653832 (8 pages)

Room-temperature oxygen sensitization in highly textured, nanocrystalline PbTe films: A mechanistic study

Jianfei Wang1, Juejun Hu1,2, Piotr Becla1, Anuradha M. Agarwal1, and Lionel C. Kimerling1

1Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
2Department of Materials Science and Engineering, University of Delaware, DuPont Hall, Newark, Delaware 19716, USA

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(Received 6 May 2011; accepted 20 September 2011; published online 31 October 2011)

In this paper, we report large mid-wave infrared photoconductivity in highly textured, nanocrystalline PbTe films thermally evaporated on Si at room temperature. Responsivity as high as 25 V/W is measured at the 3.5 μm wavelength. The large photoconductivity is attributed to the oxygen incorporation in the films by diffusion. Carrier concentration as low as 1017 cm−3 is identified to be the consequence of Fermi level pinning induced by the diffused oxygen. The successful demonstration of IR-sensitive PbTe films without the need for high-temperature processing presents an important step toward monolithic integration of mid-wave PbTe infrared detectors on Si read-out integrated circuits (ROICs).

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
    1. Microstructure analysis
    2. Oxygen concentration depth profiling and chemical states
    3. Hall experiment
    4. Electrical property and photoconductivity
  4. CONCLUSIONS

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KEYWORDS and PACS

PACS

  • 73.50.Pz

    Photoconduction and photovoltaic effects

  • 81.15.Dj

    E-beam and hot filament evaporation deposition

  • 71.20.Gj

    Other metals and alloys

  • 72.40.+w

    Photoconduction and photovoltaic effects

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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