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Journal of Applied Physics / Volume 110 / Issue 7 / ARTICLES / Electronic Structure and Transport

J. Appl. Phys. 110, 073708 (2011); http://dx.doi.org/10.1063/1.3638443 (5 pages)

Effect of sub-bandgap illumination on the internal electric field of CdZnTe

Aaron L. Washington, II1, Lucile C. Teague1, Martine C. Duff1, Arnold Burger2, Michael Groza2, and Vladimir Buliga2

1Savannah River National Laboratory, Aiken, South Carolina 29808, USA
2Fisk University, Nashville, Tennessee 37208-3051, USA

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(Received 8 February 2011; accepted 10 August 2011; published online 12 October 2011)

Post-growth manipulation of the internal electric field in CdZnTe crystals using sub-bandgap illumination is measured as a function of temperature through infrared (IR) transmission measurements. Using near sub-bandgap IR illumination, both the optical de-trapping of charge carriers and the reduction in carrier recombination increased the mobility lifetime in the crystal. The increased carrier transport is a direct result of decreased hole and electron trapping in addition to other underlying mechanisms. Concentration of the electric field near the cathode is also observed. We measured the electric field distribution with sub-bandgap illumination as a function of temperature via the Pockels effect.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

RELATED DATABASES

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KEYWORDS and PACS

Keywords

cadmium compounds, carrier mobility, II-VI semiconductors, infrared spectra, lighting, Pockels effect, radiation pressure, wide band gap semiconductors, zinc compounds

PACS

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 72.80.Ey

    III-V and II-VI semiconductors

  • 78.20.Jq

    Electro-optical effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3638443

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    P. J. Sellin, G. Prekas, J. Franc, and R. Grill, Appl. Phys. Lett. 96(13), 133509 (2010)APPLAB000096000013133509000001.

    M. Groza, H. Krawczynski, A. Garson, J. W. Martin, K. Lee, Q. Li, M. Beilicke, Y. L. Cui, V. Buliga, M. S. Guo, C. Coca, and A. Burger, J. Appl. Phys. 107, 023704 (2010)JAPIAU000107000002023704000001.


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