jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Journal of Applied Physics / Volume 110 / Issue 12 / ARTICLES / Nanoscale Science and Design

J. Appl. Phys. 110, 124310 (2011); http://dx.doi.org/10.1063/1.3671006 (8 pages)

Surface modification of monocrystalline zinc oxide induced by high-density electronic excitation

Luc Museur1, Alexandra Manousaki2, Demetrios Anglos2,3, and Andrei V. Kanaev4

1Laboratoire de Physique des Lasers, LPL CNRS, Institut Galilée, Université Paris 13, 93430, Villetaneuse, France
2Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas (IESL-FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete, Greece
3Department of Chemistry, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete, Greece
4Laboratoire des Sciences des Procédés et des Matériaux, LSPM CNRS, Institut Galilée, Université Paris 13, 93430 Villetaneuse, France

View MapView Map

(Received 30 June 2011; accepted 16 November 2011; published online 20 December 2011)

Strong modifications of semiconductors can be provoked by high-density electronic excitation. We report on surface structuring of monocrystalline wurtzite O-face (0001) ZnO excited by UV femtosecond laser pulses (248 nm) below the ablation threshold. At fluences above 11 mJ/cm2, nanoholes of D=10 nm diameter appear quasi-periodically separated by a distance ∼30 nm (=3 D). Dual-pulse (pump-pump) experiments permit estimation of the electronic excitation lifetime responsible for this nanostructuring, which is in agreement with the electron-hole plasma lifetime 220 ps. The nanostructuring results in a smaller monocrystalline domain of ∼0.1 μm size and increases the crystalline interplane c-distance by 0.11%. The excitonic luminescence of the irradiated sample is found to increase by about 10 times. The nanostructuring remains stable in a limited range of laser fluences: above 40 mJ/cm2 the surface melts, which accelerates the photoinduced bonds breaking leading to surface erosion. We tentatively ascribe the related mechanism to the nucleation-growth of cluster vacancies at crystal dislocations accelerated by the non-thermal (electronic) melting of the surface layer. At fluences lower than 11 mJ/cm2, larger volcano-like features of 60-nm diameter were observed. The characteristic crater shape and irregular surface repartition permit their assignment to thermal explosion of impurities due to multiple exciton condensation.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
    1. Nanostructuring of monocrystalline ZnO
    2. Mechanism of nanostructuring
  4. CONCLUSION

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

excitons, high-speed optical techniques, II-VI semiconductors, impurities, laser materials processing, nanofabrication, nanostructured materials, nucleation, photoluminescence, solid-state plasma, surface structure, ultraviolet spectra, vacancies (crystal), wide band gap semiconductors, zinc compounds

PACS

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 68.65.-k

    Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

  • 71.35.-y

    Excitons and related phenomena

  • 42.62.-b

    Laser applications

  • 78.40.Fy

    Semiconductors

  • 78.55.Et

    II-VI semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3671006

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. S. Graves and R. E. Allen, Phys. Rev. B 58, 13627 (1999).

    J. Dai, C. X. Xu, P. Wu, J. Y. Guo, Z. H. Li, and Z. L. Shi, Appl. Phys. Lett. 97, 011101 (2010)APPLAB000097000001011101000001.

    H. Kwak, K. C. Chou, J. Guo, and H. W. K. Tom, Phys. Rev. Let. 83, 3745 (1999).

    J. Kanasaki and K. Tanimura, Phys. Rev. B 66, 125320 (2002).

    H. Yasuda, A. Tanaka, K. Matsumoto, N. Nitta, and H. Mori, Phys. Rev. Lett. 100, 105506 (2008).


Figures (9)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Surface modification of monocrystalline zinc oxide induced by high-density electronic excitation
  2. Hysteretic spin-wave excitation in spin-torque oscillators as a function of the in-plane field angle: A micromagnetic description
  3. Tunning of microstructure and thermoelectric properties of Ca3Co4O9 ceramics by high-magnetic-field sintering
  4. A semi-analytical model for semiconductor solar cells
  5. Gauge fields in spintronics
Go to AIP Home
Copyright © American Institute of Physics
close