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Journal of Applied Physics / Volume 110 / Issue 11 / ARTICLES / Dielectrics and Ferroelectricity

J. Appl. Phys. 110, 114102 (2011); http://dx.doi.org/10.1063/1.3662145 (5 pages)

Local density of trap states in SiO2 and Si3N4 films studied by single electron tunneling force spectroscopy

Dustin Winslow and Clayton Williams

Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, USA

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(Received 7 September 2011; accepted 13 October 2011; published online 1 December 2011)

Standard methods used to characterize defect states in dielectric films generally provide spatially averaged defect information. The development of single electron tunneling force spectroscopy provides for the measurement of local density of trap states with atomic scale spatial resolution. In this article, local density of trap states measurements recently obtained on both silicon dioxide and silicon nitride are presented. Local density of states data observed by this method varies from one location to another. The local spectra are compared with previous measurements and theoretical predictions found in the literature.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. METHOD
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

defect states, dielectric thin films, electronic density of states, silicon compounds, tunnelling spectroscopy

PACS

  • 71.55.Ht

    Other nonmetals

  • 73.20.At

    Surface states, band structure, electron density of states

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3662145

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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