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Journal of Applied Physics / Volume 110 / Issue 11 / ARTICLES / Lasers, Optics, and Optoelectronics

J. Appl. Phys. 110, 113108 (2011); http://dx.doi.org/10.1063/1.3665218 (8 pages)

Hot carriers relaxation in highly excited polar semiconductors: Hot phonons versus phonon–plasmon coupling

Eric Tea, Hani Hamzeh, and Frédéric Aniel

Institut d’Electronique Fondamentale, University Paris-Sud, 91405 Orsay, France

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(Received 29 July 2011; accepted 29 October 2011; published online 8 December 2011)

We present a study of the photo-excited charge carriers relaxation dynamics in polar semiconductors comparing calculations to pump probe experiments. Hot carrier densities in the 1018cm-3 range can easily be photo-generated using moderately intense optical excitations. This can lead to known phenomena, namely, hot phonon populations and the coupling of polar optical phonons with plasmon modes. However, these two phenomena can affect the hot carriers relaxation and have never been examined together. This is a problem for the theoretical study of future Hot Carrier Solar Cells, where the conditions allow both of these phenomena to occur. The charge carriers dynamics and the coupling of polar optical phonons with plasmon modes are treated by a Full Band Ensemble Monte Carlo simulation code featuring a self-consistent dielectric function. To take into consideration hot phonon populations and the subsequent phonon bottleneck for the carriers relaxation, the charge carriers simulation code is coupled to a phonon dedicated Ensemble Monte Carlo code. This enables for the first time an accurate study of both the charge carriers and phonon systems dynamics, the latter being most of the time overly simplified in previous studies. The present work explores to which extent the two aforementioned phenomena affect the photo-generated charge carriers relaxation in GaAs and can be easily adapted to other polar semiconductors.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EMC SOLVERS
    1. Charge carriers EMC
    2. Phonons EMC
    3. Coupled EMC solvers
  3. RESULTS AND DISCUSSION
    1. Low electron-hole pair density
    2. High electron-hole pair density
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

carrier density, carrier relaxation time, dielectric function, gallium arsenide, III-V semiconductors, Monte Carlo methods, phonon-plasmon interactions, polar semiconductors, SCF calculations, valence bands

PACS

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 71.45.Gm

    Exchange, correlation, dielectric and magnetic response functions, plasmons

  • 71.20.Nr

    Semiconductor compounds

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 71.15.Mb

    Density functional theory, local density approximation, gradient and other corrections

  • 63.20.-e

    Phonons in crystal lattices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3665218

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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