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Journal of Applied Physics / Volume 110 / Issue 10 / ARTICLES / Device Physics

J. Appl. Phys. 110, 104508 (2011); http://dx.doi.org/10.1063/1.3663280 (4 pages)

Positive or negative gain: Role of thermal capture cross sections in impurity photovoltaic effect

Jiren Yuan1,2, Honglie Shen1, Haibin Huang3, and Xinhua Deng2

1Nanjing University of Aeronautics and Astronautics, Nanjing 211106, People’s Republic of China
2College of Science, Nanchang University, Nanchang 330031, People’s Republic of China
3College of Photovoltaic Engineering, Nanchang University, Nanchang 330031, People’s Republic of China

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(Received 30 May 2011; accepted 11 October 2011; published online 23 November 2011)

In this work, we carried out a numerical study on the role of thermal capture cross sections in impurity photovoltaic (IPV) effect for silicon solar cells doped with indium. The short-circuit current density, the open-circuit voltage and the conversion efficiency of the IPV cell were calculated in dependence of variable electron and hole thermal capture cross sections of indium in silicon. We found that the thermal capture cross section of electron is crucial to the device performance and that of hole has few influence on the cell property for this IPV cell since acceptor-type indium impurity level is near the valence band edge. If the electron thermal capture cross section is less than 10−20 cm2, a positive gain of conversion efficiency for the IPV cell would be presented. We concluded that those impurities with small electron (or hole) thermal capture cross sections may be suitable for use in the IPV cell with acceptor-type (or donor-type) impurity level near the valence (or conduction) band edge. These results may help to evaluate the potential of the IPV effect for improving cell efficiency according to the thermal capture cross sections of the impurity in host semiconductor.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. THEORY
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

current density, elemental semiconductors, impurity states, indium, photovoltaic effects, silicon, solar cells, valence bands

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3663280

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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