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J. Appl. Phys. 109, 093702 (2011); http://dx.doi.org/10.1063/1.3579997 (5 pages)

Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer

Nikolaos Tombros1,2, Alina Veligura2, Juliane Junesch2, J. Jasper van den Berg2, Paul J. Zomer2, Magdalena Wojtaszek2, Ivan J. Vera Marun2, Harry T. Jonkman1, and Bart J. van Wees2

1Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, The Netherlands
2Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, The Netherlands

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(Received 11 November 2010; accepted 17 February 2011; published online 2 May 2011)

The recent observation of a fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron–electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr, and Nb) because only those are not attacked by the reactive acid etching fabrication step. Here we show a new technique that leads to mechanically stable suspended high mobility graphene devices and is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm2/Vs at an electron carrier density of n = 5.0 × 109 cm−2 at 77 K. This technique paves the way toward complex suspended graphene based spintronic, superconducting, and other types of devices.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS
  5. METHODS

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0021-8979 (print)  
1089-7550 (online)

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