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Journal of Applied Physics / Volume 109 / Issue 9 / SPECIAL TOPIC: SELECTED PAPERS FROM THE 21ST INTERNATIONAL SYMPOSIUM ON INTEGRATED FUNCTIONALITIES, COLORADO SPRINGS, COLORADO, USA, SEPTEMBER 2009

J. Appl. Phys. 109, 091602 (2011); http://dx.doi.org/10.1063/1.3581193 (6 pages)

A non-filamentary model for unipolar switching transition metal oxide resistance random access memories

Kan-Hao Xue1,2, Carlos A. Paz de Araujo1,2, Jolanta Celinska2, and Christopher McWilliams2

1Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80918, USA
2Symetrix Corporation, 5055 Mark Dabling Boulevard, Colorado Springs, Colorado 80918, USA

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(Received 13 January 2010; accepted 1 June 2010; published online 13 May 2011)

A model for resistance random access memory (RRAM) is proposed. The RRAM under research utilizes certain transition metal oxide (TMO) such as NiO which shows unipolar switching behavior. The existence of metal/insulator states is not explained by filaments but attributed to different Hubbard U values, which stems from an electron correlation effect. Current-voltage formulae are given both on the metal and insulator sides by putting the appropriate solutions of Hubbard model into the mesoscopic Meir-Wingreen transport equation. The RESET phenomenon is explained by a sufficient separation of Fermi levels in the electrodes and hence a Mott transition can be triggered in the anodic region due to a lack of electrons. The SET behavior originates from a tunneling current which removes the insulating region near the anode. Several experimental evidences are also presented to support this model. The model also serves as the theoretical prototype of Correlated Electron Random Access Memory (CeRAM) which is defined to be a TMO RRAM whose working mechanism is based on the strong electron correlation effects.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. A MODEL BASED ON MOTT-HUBBARD PICTURE
    1. The two resistance states
    2. Transport equation and the model Hamiltonian
    3. Modeling of the metal side and RESET
    4. Modeling of the insulator side and SET
    5. Further discussions and experimental support
  3. THE CONCEPT OF CORRELATED ELECTRON RANDOM ACCESS MEMORY (CERAM)
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

Fermi level, Hubbard model, metal-insulator transition, nickel compounds, random-access storage, strongly correlated electron systems

PACS

  • 84.30.Sk

    Pulse and digital circuits

  • 71.10.Fd

    Lattice fermion models (Hubbard model, etc.)

  • 73.20.At

    Surface states, band structure, electron density of states

  • 71.30.+h

    Metal-insulator transitions and other electronic transitions

  • 72.60.+g

    Mixed conductivity and conductivity transitions

  • 71.27.+a

    Strongly correlated electron systems; heavy fermions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3581193

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. Ielmini, C. Cagli, and F. Nardi, Appl. Phys. Lett. 94, 063511 (2009)APPLAB000094000006063511000001.

    D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett. 88, 202102 (2006)APPLAB000088000020202102000001.

    M. J. Sánchez, M. J. Rozenberg, and I. H. Inoue, Appl. Phys. Lett. 91, 252101 (2007)APPLAB000091000025252101000001.

    N. F. Mott, Rev. Mod. Phys. 40, 677 (1968).

    J. Zaanen, G. A. Sawatzky, and J. W. Allen, Phys. Rev. Lett. 55, 418 (1985).


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