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J. Appl. Phys. 109, 07A316 (2011); http://dx.doi.org/10.1063/1.3549594 (3 pages)

Sub-100 μm scale on-chip inductors with CoZrTa for GHz applications

Wei Xu1, Hao Wu1, Donald S. Gardner2, Saurabh Sinha1, Tawab Dastagir1, Bertan Bakkaloglu1, Yu Cao1, and Hongbin Yu1

1Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85281, USA
2Intel Labs, Intel Corp., Santa Clara, California 95052, USA

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(Received 25 September 2010; accepted 14 November 2010; published online 29 March 2011)

On-chip inductors with magnetic material are fabricated with complementary metal-oxide semiconductor processes. The inductors use copper metallization and amorphous CoZrTa thinfilms. Enhancements of 3.5X in inductance and 3X for the quality factor at frequencies as highas 3 GHz have been successfully demonstrated by using a continuous CoZrTa-ring structure in spiral inductors at the 100 μm scale. Further improvement of the frequency response of inductance up to 6 GHz was achieved by micro-patterning the magnetic film. The effect ofincreasing the film thickness on the performance of strip line inductors was measured and modeled. This work demonstrates significantly larger increases in inductance and quality factor atabove 1 GHz as compared to prior efforts, thereby making the added processing cost worthwhile.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

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KEYWORDS and PACS

PACS

  • 84.32.Hh

    Inductors and coils; wiring

  • 85.40.Ls

    Metallization, contacts, interconnects; device isolation

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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    References

    D. S. Gardner, G. Schrom, P. Hazucha, F. Paillet, T. Karnik, S. Borkar, R. Hallstein, T. Dambrauskas, C. Hill, C. Linde, W. Worwag, R. Barese, and S. Muthukumar, J. Appl. Phys. 103, 07E927 (2008)JAPIAU00010300000707E927000001.

    M. Yamaguchi, K. Suezawa, K. I. Arai, Y. Takahashi, S. Kikuchi, Y. Shimada, W. D. Li, S. Tanabe, and K. Ito, J. Appl. Phys. 85, 7919 (1999)JAPIAU000085000011007919000001.


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