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Journal of Applied Physics / Volume 109 / Issue 6 / ARTICLES / Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

J. Appl. Phys. 109, 063524 (2011); http://dx.doi.org/10.1063/1.3555624 (7 pages)

Study of roughness evolution and layer stacking faults in short-period atomic layer deposited HfO2/Al2O3 multilayers

M. de Pauli1,2, A. Malachias1, H. Westfahl, Jr.1, J. Bettini1, A. Ramirez1, G. S. Huang3,4, Y. F. Mei3,4, and O. G. Schmidt4

1Laboratório Nacional de Luz Síncrotron, Caixa Postal 6192 - CEP 13083-970, Campinas, SP, Brazil
2Instituto de Física Gleb Wataghin - Universidade Estadual de Campinas - CEP 13083-859, Campinas, SP, Brazil
3Department of Material Science, Fudan University, 220 Handan Road, Shanghai 200433, People’s Republic of China
4Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany

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(Received 3 December 2010; accepted 15 January 2011; published online 22 March 2011)

In this work we study the evolution of roughness in interfaces of HfO2/Al2O3 multilayers by x-ray reflectivity. It was found that, besides the reduced adatom surface mobility during atomic layer deposition, an improvement of the interface quality can be achieved upon the stacking of several layers. Although the low roughness of the initial surface could not be recovered, there was a considerable improvement of surface/interface quality along the deposition process. In particular, variations on the growth temperature were not able to tailor the surface quality, if compared to the stacking process. Finally, transmission electron microscopy analysis has shown that local defects can take place among nearly perfect interfaces. Such effect must be taken into account for nanometer-scale device fabrication.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL
  3. X-RAY REFLECTIVITY MODEL
  4. RESULTS AND DISCUSSION
  5. CONCLUSION

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KEYWORDS and PACS

Keywords

adsorbed layers, alumina, atomic layer deposition, hafnium compounds, high-k dielectric thin films, interface roughness, multilayers, stacking faults, surface diffusion, surface structure, transmission electron microscopy, X-ray reflection

PACS

  • 68.65.Ac

    Multilayers

  • 68.35.Ct

    Interface structure and roughness

  • 68.35.bt

    Other materials

  • 68.43.Jk

    Diffusion of adsorbates, kinetics of coarsening and aggregation

  • 77.55.D-

    High-permittivity gate dielectric films

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3555624

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    G. D. Wilk, R. M. Wallace and J. M. Anthony, J. Appl. Phys. 89 5243 (2001)JAPIAU000089000010005243000001.

    R. Paniago, R. Forrest, P. C. Chow, S. C. Moss, S. S. P. Parkin, and D. Cookson, Phys. Rev. B 56, 13442 (1997).

    S. K. Sinha, E. B. Sirota, S. Garoff, and H. B. Stanley, Phys. Rev. B 38, 2297 (1988).

    L. G. Parratt, Phys. Rev. 95, 359 (1954).


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