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Journal of Applied Physics / Volume 109 / Issue 2 / ARTICLES / Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

J. Appl. Phys. 109, 023510 (2011); http://dx.doi.org/10.1063/1.3533995 (5 pages)

Initial misfit dislocations in a graded heteroepitaxial layer

D. Sidoti, S. Xhurxhi, T. Kujofsa, S. Cheruku, J. P. Correa, B. Bertoli, P. B. Rago, E. N. Suarez, F. C. Jain, and J. E. Ayers

Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269-2157, USA

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(Received 30 March 2010; accepted 3 December 2010; published online 19 January 2011)

We show that for a mismatched heteroepitaxial layer with linear compositional grading, the first misfit dislocations will be introduced at a finite distance yC from the substrate interface. This is of practical as well as fundamental importance; it alters the value of the critical layer thickness for lattice relaxation and it moves the misfit dislocations away from the interface, where contaminants and defects may cause dislocation pinning or mobility reduction. We have calculated the position of the initial misfit dislocations yC for linearly graded Si1−xGex/Si(001) heteroepitaxial layers with lattice mismatch given by f = Cfy, where Cf is the grading coefficient and y is the distance from the interface. The distance of the first misfit dislocations from the interface yC decreases with increasing grading coefficient but can exceed 40 nm in layers with shallow grading (|Cf|<12 cm−1). For the range of grading coefficients investigated, yC varies from 6% to 11% of the critical layer thickness. Based on the model presented here it is possible to choose the grading coefficient to achieve the desired separation of the misfit dislocations from the substrate interface.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. THEORY
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

dislocation motion, dislocation pinning, elemental semiconductors, Ge-Si alloys, semiconductor epitaxial layers, semiconductor heterojunctions, silicon

PACS

  • 61.72.Hh

    Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

  • 61.72.Bb

    Theories and models of crystal defects

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 68.55.ag

    Semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3533995

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

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    B. Bertoli, E. N. Suarez, J. E. Ayers, and F. C. Jain, J. Appl. Phys. 106, 073519 (2009)JAPIAU000106000007073519000001.


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