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J. Appl. Phys. 109, 113720 (2011); http://dx.doi.org/10.1063/1.3594686 (6 pages)

A Boltzmann-weighted hopping model of charge transport in organic semicrystalline films

Joe J. Kwiatkowski1,2, Leslie H. Jimison2, Alberto Salleo2, and Andrew J. Spakowitz1

1Chemical Engineering, Keck Sciences, Stanford University, Stanford, California 94305, USA
2Materials Science and Engineering, McCullough Building, Stanford University, Stanford, California 94305, USA

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(Received 19 January 2011; accepted 18 April 2011; published online 14 June 2011)

We present a model of charge transport in polycrystalline electronic films, which considers details of the microscopic scale while simultaneously allowing realistically sized films to be simulated. We discuss the approximations and assumptions made by the model, and rationalize its application to thin films of directionally crystallized poly(3-hexylthiophene). In conjunction with experimental data, we use the model to characterize the effects of defects in these films. Our findings support the hypothesis that it is the directional crystallization of these films, rather than their defects, which causes anisotropic mobilities.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. THE BOLTZMANN-WEIGHTED HOPPING MODEL
  3. SIMULATING CHARGE TRANSPORT IN DIRECTIONALLY CRYSTALLIZED P3HT FILMS
    1. The effect of film defects
      1. The effect of intra-fiber breaks
      2. The effect of inter-fiber breaks
      3. The effect of disordered regions
  4. CONCLUSION

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KEYWORDS and PACS

PACS

  • 81.05.Fb

    Organic semiconductors

  • 72.10.Bg

    General formulation of transport theory

  • 73.50.Dn

    Low-field transport and mobility; piezoresistance

  • 73.61.Ph

    Polymers; organic compounds

  • 81.05.Lg

    Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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    References

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Supplemental Files (EPAPS)

  • si.pdf (137 kB) 13-Jun-2011 17:26

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