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Journal of Applied Physics / Volume 109 / Issue 1 / ARTICLES / Nanoscale Science and Design

J. Appl. Phys. 109, 014321 (2011); http://dx.doi.org/10.1063/1.3531112 (6 pages)

Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

Viney Saini1, Zhongrui Li1, Shawn Bourdo1,2, Vasyl P. Kunets3, Steven Trigwell4, Arthur Couraud1,5, Julien Rioux1,5, Cyril Boyer1,5, Valens Nteziyaremye1, Enkeleda Dervishi1, Alexandru R. Biris6, Gregory J. Salamo3, Tito Viswanathan2, and Alexandru S. Biris1

1Department of Applied Science, UALR Nanotechnology Center, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA
2Department of Chemistry, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA
3Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
4ASRC Aerospace Corporation, NASA Kennedy Space Center, Mail Code: ASRC-24, Florida 32899, USA
5Ecole d’Ingenieurs du CESI-EIA, La Couronne, France
6National Institute for Research and Development of Isotopic and Molecular Technologies, Cluj-Napoca, Romania

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(Received 27 September 2010; accepted 22 November 2010; published online 13 January 2011)

A simple and easily processible photovoltaic device has been developed based on boron-doped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The SWNTs were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis, transmission electron microscopy, and x-ray photoelectron spectroscopy. The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection, and transportation while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.

© 2011 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL DETAILS
  3. RESULTS AND DISCUSSION
    1. Boron-doped single-wall carbon nanotube characterization
    2. Boron-doped single-wall carbon nanotube/n-silicon solar cell characterization
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

annealing, boron, carbon nanotubes, elemental semiconductors, ink jet printing, photovoltaic cells, Raman spectra, semiconductor-insulator boundaries, silicon, solar cells, spin coating, thermal analysis, thin films, transmission electron microscopy, X-ray photoelectron spectra

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3531112

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

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