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Journal of Applied Physics / Volume 108 / Issue 9 / ARTICLES / Dielectrics and Ferroelectricity

J. Appl. Phys. 108, 094101 (2010); http://dx.doi.org/10.1063/1.3503209 (7 pages)

Electrical characterization of PMN–28%PT(001) crystals used as thin-film substrates

Andreas Herklotz1, Johannes D. Plumhof2, Armando Rastelli2, Oliver G. Schmidt2, Ludwig Schultz1, and Kathrin Dörr1

1Institute for Metallic Materials, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
2Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany

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(Received 16 July 2010; accepted 27 September 2010; published online 1 November 2010)

Ferroelectric and piezoelectric properties of (001) 0.72PbMg1/3Nb2/3O3–0.28PbTiO3 (PMN–28%PT) single crystals have been investigated from cryogenic temperatures to 475 K. PMN–28%PT is used as piezoelectric substrate, e.g., in multiferroic heterostructures. Electric field-induced phase transformations have been examined by electrical characterization including measurements of polarization loops, dielectric permitivitty, and the resistance change in La0.7Sr0.3MnO3 films deposited on the (001) face. The relaxor ferroelectric transition behavior was studied by means of time-dependent current measurements. A phase diagram is set up. PMN–28%PT is found to be at the border of the appearance of the monoclinc phase (MC) bridging the rhombohedral-tetragonal (R-T) transformation at higher PbTiO3 contents. Measurements of the lattice expansion reveal that a high piezoelectric effect persists down to low temperatures. Therefore, PMN–28%PT single crystals are found to be appropriate substrates for application of piezoelectric strain to thin films over a broad temperature range.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
    1. Phase diagram
      1. Polarization and piezoelectric strain at 300 K
      2. Structural transitions
      3. Paraelectric phase
      4. Phase diagram
    2. Relaxor-ferroelectric behavior
      1. Temperature-induced ferroelectric-relaxor transition
      2. Electric field-induced relaxor-to-normal-ferroelectric transition
    3. Low-temperature behavior
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

ferroelectric materials, ferroelectric transitions, lanthanum compounds, lead compounds, permittivity, phase diagrams, piezoelectric materials, relaxor ferroelectrics, solid-state phase transformations, strontium compounds, thin films

PACS

  • 77.80.bn

    Strain and interface effects

  • 77.55.hn

    Other piezoelectric or electrostrictive films

  • 77.22.Ch

    Permittivity (dielectric function)

  • 77.80.Jk

    Relaxor ferroelectrics

  • 64.70.K-

    Solid-solid transitions

  • 81.30.Dz

    Phase diagrams of other materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3503209

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. E. Park and T. R. Shrout, J. Appl. Phys. 82, 1804 (1997)JAPIAU000082000004001804000001.

    A. D. Rata, A. Herklotz, K. Nenkov, L. Schultz, and K. Dörr, Phys. Rev. Lett. 100, 076401 (2008).

    M. Biegalski, K. Dörr, D. H. Kim, and H. M. Christen, Appl. Phys. Lett. 96, 151905 (2010)APPLAB000096000015151905000001.

    O. Bilani-Zeneli, A. D. Rata, A. Herklotz, O. Mieth, L. M. Eng, L. Schultz, M. D. Biegalski, H. M. Christen, and K. Dörr, J. Appl. Phys. 104, 054108 (2008)JAPIAU000104000005054108000001.

    F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Krpek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, and O. G. Schmidt, Phys. Rev. Lett. 104, 067405 (2010).

    C. Thiele, K. Dörr, S. Fähler, L. Schultz, D. C. Meyer, A. A. Levin, and P. Paufler, Appl. Phys. Lett. 87, 262502 (2005)APPLAB000087000026262502000001.

    R. K. Zheng, Y. Wang, H. L. W. Chan, C. L. Choy, and H. S. Luo, Appl. Phys. Lett. 92, 082908 (2008)APPLAB000092000008082908000001.

    R. K. Zheng, H. -U. Habermeier, H. L. W. Chan, C. L. Choy, and H. S. Luo, Phys. Rev. B 81, 104427 (2010).

    B. Noheda, D. E. Cox, G. Shirane, J. A. Gonzalo, L. E. Cross, and S. -E. Park, Appl. Phys. Lett. 74, 2059 (1999)APPLAB000074000014002059000001.

    B. Noheda, D. E. Cox, G. Shirane, S. -E. Park, L. E. Cross, and Z. Zhong, Phys. Rev. Lett. 86, 3891 (2001).

    J. -M. Kiat, Y. Uesu, B. Dkhil, M. Matsuda, C. Malibert, and G. Calvarin, Phys. Rev. B 65, 064106 (2002).

    B. Noheda, D. E. Cox, G. Shirane, J. Gao, and Z. G. Ye, Phys. Rev. B 66, 054104 (2002).

    K. Ohwada, K. Hirota, P. W. Rehrig, Y. Fujii, and G. Shirane, Phys. Rev. B 67, 094111 (2003).

    F. M. Bai, N. G. Wang, J. F. Li, D. Viehland, P. M. Gehring, G. Y. Xu, and G. Shirane, J. Appl. Phys. 96, 1620 (2004)JAPIAU000096000003001620000001.

    W. Ren, S. -F. Liu, and B. K. Mukherjee, Appl. Phys. Lett. 80, 3174 (2002)APPLAB000080000017003174000001.

    D. Vanderbilt and M. H. Cohen, Phys. Rev. B 63, 094108 (2001).

    C. Thiele, K. Dörr, L. Schultz, E. Beyreuther, and W. M. Lin, Appl. Phys. Lett. 87, 162512 (2005)APPLAB000087000016162512000001.

    J. P. Han and W. W. Cao, Phys. Rev. B 68, 134102 (2003).

    W. J. Merz, Phys. Rev. 91, 513 (1953).

    N. Srivastava and G. J. Weng, J. Appl. Phys. 99, 054103 (2006)JAPIAU000099000005054103000001.

    M. Davis, D. Damjanovic, and N. Setter, Phys. Rev. B 73, 014115 (2006).

    Y. M. Jin, Y. U. Wang, A. G. Khachaturyan, J. F. Li, and D. Viehland, J. Appl. Phys. 94, 3629 (2003)JAPIAU000094000005003629000001.

    Y. U. Wang, Phys. Rev. B 73, 014113 (2006).

    H. Cao, J. Li, and D. Viehland, J. Appl. Phys. 100, 034110 (2006)JAPIAU000100000003034110000001.

    C. -S. Tu, C. -M. Hsieh, R. R. Chien, V. H. Schmidt, F. -T. Wang, and W. S. Chang, J. Appl. Phys. 103, 074117 (2008)JAPIAU000103000007074117000001.

    Y. Guo, H. Luo, K. Chen, H. Xu, X. Zhang, and Z. Yin, J. Appl. Phys. 92, 6134 (2002)JAPIAU000092000010006134000001.


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