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Journal of Applied Physics / Volume 108 / Issue 5 / ARTICLES / Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

J. Appl. Phys. 108, 053518 (2010); http://dx.doi.org/10.1063/1.3476286 (8 pages)

Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples

A. Pitanti1,2, D. Navarro-Urrios3, N. Prtljaga1, N. Daldosso1, F. Gourbilleau4, R. Rizk4, B. Garrido3, and L. Pavesi1

1Department of Physics, Nanoscience Laboratory, University of Trento, via Sommarive 14, Trento 38100, Italy
2NEST, Scuola Normale Superiore, Istituto di nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa, Italy
3Dept. Electrònica, MIND-IN2UB, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, CAT, Spain
4CIMAP, UMR CEA/CNRS/ENSICAEN/Univ. CAEN, No. 6252 ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France

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(Received 1 December 2009; accepted 14 July 2010; published online 13 September 2010)

We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (<200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron-“recycling” effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. MATERIAL AND METHODS
  3. VISIBLE PL SPECTROSCOPY
  4. RATE EQUATION SEMIEMPIRICAL MODELING
  5. CONCLUSIONS

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KEYWORDS and PACS

Keywords

Auger electron spectra, elemental semiconductors, erbium, infrared spectra, nanoparticles, photoluminescence, silicon, silicon compounds, visible spectra

PACS

  • 78.55.Ap

    Elemental semiconductors

  • 78.30.Am

    Elemental semiconductors and insulators

  • 78.67.Bf

    Nanocrystals, nanoparticles, and nanoclusters

  • 82.80.Pv

    Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

  • 79.20.Fv

    Electron impact: Auger emission

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3476286

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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