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15 Aug 2010

Volume 108, Issue 4, Articles (04xxxx)

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J. Appl. Phys. 108, 041901 (2010); http://dx.doi.org/10.1063/1.3474648 (2 pages)

Sergei V. Kalinin, Nava Setter, and Andrei L. Kholkin
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Preface to Special Topic: Invited Papers from the International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Aveiro, Portugal, 2009

Sergei V. Kalinin, Nava Setter, and Andrei L. Kholkin

J. Appl. Phys. 108, 041901 (2010); http://dx.doi.org/10.1063/1.3474648 (2 pages) | Cited 4 times

Online Publication Date: 31 August 2010

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Abstract Unavailable
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77.80.Dj Domain structure; hysteresis
68.37.Ps Atomic force microscopy (AFM)
82.45.-h Electrochemistry and electrophoresis
77.80.Jk Relaxor ferroelectrics
77.65.-j Piezoelectricity and electromechanical effects

Correlation of electron backscatter diffraction and piezoresponse force microscopy for the nanoscale characterization of ferroelectric domains in polycrystalline lead zirconate titanate

T. L. Burnett, P. M. Weaver, J. F. Blackburn, M. Stewart, and M. G. Cain

J. Appl. Phys. 108, 042001 (2010); http://dx.doi.org/10.1063/1.3474940 (7 pages) | Cited 4 times

Online Publication Date: 31 August 2010

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The functional properties of ferroelectric ceramic bulk or thin film materials are strongly influenced by their nanostructure, crystallographic orientation, and structural geometry. In this paper, we show how, by combining textural analysis, through electron backscattered diffraction, with piezoresponse force microscopy, quantitative measurements of the piezoelectric properties can be made at a scale of 25 nm, smaller than the domain size. The combined technique is used to obtain data on the domain-resolved effective single crystal piezoelectric response of individual crystallites in Pb(Zr0.4Ti0.6)O3 ceramics. The results offer insight into the science of domain engineering and provide a tool for the future development of new nanostructured ferroelectric materials for memory, nanoactuators, and sensors based on magnetoelectric multiferroics.
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77.80.Dj Domain structure; hysteresis
61.46.-w Structure of nanoscale materials
79.20.Kz Other electron-impact emission phenomena
68.49.Jk Electron scattering from surfaces
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.55.H- Piezoelectric and electrostrictive films

Lateral piezoelectric response across ferroelectric domain walls in thin films

J. Guyonnet, H. Béa, and P. Paruch

J. Appl. Phys. 108, 042002 (2010); http://dx.doi.org/10.1063/1.3474953 (11 pages) | Cited 5 times

Online Publication Date: 31 August 2010

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In purely c-axis oriented PbZr0.2Ti0.8O3 ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180° domain walls, where the out-of-plane oriented polarization is reversed. Using electric force microscopy measurements we exclude electrostatic effects as the origin of this signal. Moreover, our mechanical simulations of the tip/cantilever system show that the small tilt of the surface at the domain wall below the tip does not satisfactorily explain the observed signal either. We thus attribute this lateral piezoresponse at domain walls to their sideways motion (shear) under the applied electric field. From simple elastic considerations and the conservation of volume of the unit cell, we would expect a similar lateral signal more generally in other ferroelectric materials, and for all types of domain walls in which the out-of-plane component of the polarization is reversed through the domain wall. We show that in BiFeO3 thin films, with 180°, 109°, and 71° domain walls, this is indeed the case.
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77.55.fg Pb(Zr,Ti)O3-based films
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis

Drive frequency dependent phase imaging in piezoresponse force microscopy

Huifeng Bo, Yi Kan, Xiaomei Lu, Yunfei Liu, Song Peng, Xiaofei Wang, Wei Cai, Ruoshi Xue, and Jinsong Zhu

J. Appl. Phys. 108, 042003 (2010); http://dx.doi.org/10.1063/1.3474956 (5 pages) | Cited 2 times

Online Publication Date: 31 August 2010

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The drive frequency dependent piezoresponse (PR) phase signal in near-stoichiometric lithium niobate crystals is studied by piezoresponse force microscopy. It is clearly shown that the local and nonlocal electrostatic forces have a great contribution to the PR phase signal. The significant PR phase difference of the antiparallel domains are observed at the contact resonances, which is related to the electrostatic dominated electromechanical interactions of the cantilever and tip-sample system. Moreover, the modulation voltage induced frequency shift at higher eigenmodes could be attributed to the change of indention force depending on the modulation amplitude with a piezoelectric origin. The PR phase of the silicon wafer is also measured for comparison. It is certificated that the electrostatic interactions are universal in voltage modulated scanning probe microscopy and could be extended to other phase imaging techniques.
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07.85.-m X- and γ-ray instruments
02.10.Ud Linear algebra

Piezoresponse force microscopy investigations of Aurivillius phase thin films

Lynette Keeney, Panfeng F. Zhang, Claudia Groh, Martyn E. Pemble, and Roger W. Whatmore

J. Appl. Phys. 108, 042004 (2010); http://dx.doi.org/10.1063/1.3474959 (9 pages) | Cited 9 times

Online Publication Date: 31 August 2010

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The sol-gel synthesis and characterization of n ≥ 3 Aurivillius phase thin films deposited on Pt/Ti/SiO2–Si substrates is described. The number of perovskite layers, n, was increased by inserting BiFeO3 into three layered Aurivillius phase Bi4Ti3O12 to form compounds such as Bi5FeTi3O15 (n = 4). 30% of the Fe3+ ions in Bi5FeTi3O15 were substituted with Mn3+ ions to form the structure Bi5Ti3Fe0.7Mn0.3O15. The electromechanical responses of the materials were investigated using piezoresponse force microscopy and the results are discussed in relation to the crystallinity of the films as measured by x-ray diffraction.
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68.55.A- Nucleation and growth
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.65.-j Piezoelectricity and electromechanical effects

Individual switching of film-based nanoscale epitaxial ferroelectric capacitors

Yunseok Kim, Hee Han, Brian J. Rodriguez, Ionela Vrejoiu, Woo Lee, Sunggi Baik, Dietrich Hesse, and Marin Alexe

J. Appl. Phys. 108, 042005 (2010); http://dx.doi.org/10.1063/1.3474960 (4 pages) | Cited 9 times

Online Publication Date: 31 August 2010

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We have investigated the individual switching of nanoscale capacitors by piezoresponse force microscopy. Nanoscale epitaxial ferroelectric capacitors with terabyte per inch square equivalent density were fabricated by the deposition of top electrodes onto a pulsed laser deposited lead zirconate titanate thin film by electron beam evaporation through ultrathin anodic aluminum oxide membrane stencil masks. Using bias pulses, the nanoscale capacitors were uniformly switched and proved to be individually addressable. These film-based nanoscale capacitors might be a feasible alternative for high-density mass storage memory applications with near terabyte per inch square density due to the absence of any cross-talk effects.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors

Real space mapping of polarization dynamics and hysteresis loop formation in relaxor-ferroelectric PbMg1/3Nb2/3O3–PbTiO3 solid solutions

B. J. Rodriguez, S. Jesse, A. N. Morozovska, S. V. Svechnikov, D. A. Kiselev, A. L. Kholkin, A. A. Bokov, Z.-G. Ye, and S. V. Kalinin

J. Appl. Phys. 108, 042006 (2010); http://dx.doi.org/10.1063/1.3474961 (11 pages) | Cited 12 times

Online Publication Date: 31 August 2010

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Polarization switching in ergodic relaxor and ferroelectric phases in the PbMg1/3Nb2/3O3–PbTiO3 (PMN-PT) system is studied using piezoresponse force microscopy, single point electromechanical relaxation measurements, and voltage spectroscopy mapping. The dependence of relaxation behavior on voltage pulse amplitude and time is found to follow a universal logarithmic behavior with a nearly constant slope. This behavior is indicative of the progressive population of slow relaxation states, as opposed to a linear relaxation in the presence of a broad relaxation time distribution. The role of relaxation behavior, ferroelectric nonlinearity, and the spatial inhomogeneity of the tip field on hysteresis loop behavior is analyzed in detail. The hysteresis loops for ergodic PMN-10%PT are shown to be kinetically limited, while in PMN with larger PT content, true ferroelectric hysteresis loops with low nucleation biases are observed.
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77.80.Dj Domain structure; hysteresis
77.65.-j Piezoelectricity and electromechanical effects
77.22.Gm Dielectric loss and relaxation
77.80.Jk Relaxor ferroelectrics
77.80.Fm Switching phenomena

Investigation of the ferroelectric-relaxor transition in PbMg1/3Nb2/3O3–PbTiO3 ceramics by piezoresponse force microscopy

V. V. Shvartsman and A. L. Kholkin

J. Appl. Phys. 108, 042007 (2010); http://dx.doi.org/10.1063/1.3474962 (6 pages) | Cited 8 times

Online Publication Date: 31 August 2010

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The spontaneous transition between the ferroelectric and relaxor states was investigated in 0.86PbMg1/3Nb2/3O3–0.14PbTiO3 ceramics using piezoresponse force microscopy (PFM). Macroscopically, the transition from the ferroelectric to relaxor phases manifests itself by an anomaly in the temperature dependences of the dielectric permittivity and by a sharp decline of the remanent polarization. Alternatively, PFM reveals a decay of the ferroelectric micron-size domains at the macroscopic Curie temperature, TC. Simultaneously, smaller domains of submicron sizes are observed at temperatures appreciably above TC, being concentrated near grain boundaries. It is argued that the particular mechanical and electrical conditions at the grain boundaries promote nucleation of the ferroelectric phase.
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77.80.B- Phase transitions and Curie point
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Jk Relaxor ferroelectrics
77.22.Ch Permittivity (dielectric function)
61.72.Mm Grain and twin boundaries

Analysis of the degradation induced by focused ion Ga3+ beam for the realization of piezoelectric nanostructures

D. Rémiens, R. H. Liang, C. Soyer, D. Deresmes, D. Troadec, S. Quignon, A. Da Costa, and R. Desfeux

J. Appl. Phys. 108, 042008 (2010); http://dx.doi.org/10.1063/1.3474963 (6 pages) | Cited 2 times

Online Publication Date: 31 August 2010

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Piezoelectric nanostructures (islands of dimensions in the lateral size range 50–500 nm) have been fabricated by focused Ga3+ ion beam (FIB) etching on PbZr0.54Ti0.46O3 thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution of electromechanical activity measured by means of local piezoelectric hysteresis loops produced by piezoresponse force microscopy. The analysis of surface potential is performed by kelvin force microscopy and the measurement of current-voltage curves is carried out by conducting atomic force microscopy. Two kinds of structures, namely one based on crystallized films and the other based on amorphous ones, were studied. In this latter case, the amorphous films are postannealed after etching to obtain crystallized structure. For the structures based on the crystallized and then etched films, no piezoelectric signal was registered that evidences a serious degradation of material induced by Ga3+ ion implantation. For the structures based on the films etched in amorphous state and then crystallized, the piezoresponse signal was near to that of the reference films (crystallized and not etched) whatever were the ion dose and the island dimensions. Even for very small lateral size (50 nm), no size effect was observed. The island shapes fabricated by Ga3+ FIB etching process (islands with less than 50 nm lateral size) show a limitation of FIB processing and electron beam lithography seems to be necessary.
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81.16.Nd Micro- and nanolithography
61.80.Jh Ion radiation effects
77.65.-j Piezoelectricity and electromechanical effects
61.46.-w Structure of nanoscale materials
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning

Pyroelectric response of ferroelectric nanowires: Size effect and electric energy harvesting

A. N. Morozovska, E. A. Eliseev, G. S. Svechnikov, and S. V. Kalinin

J. Appl. Phys. 108, 042009 (2010); http://dx.doi.org/10.1063/1.3474964 (6 pages) | Cited 9 times

Online Publication Date: 31 August 2010

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The size effect on pyroelectric response of ferroelectric nanowires is analyzed. The pyroelectric coefficient strongly increases with the wire radius decrease and diverges at critical radius Rcr corresponding to the size-driven transition into paraelectric phase. Size-driven enhancement of pyroelectric coupling leads to the giant pyroelectric current and voltage generation by the polarized ferroelectric nanoparticles in response to the temperature fluctuation. The maximum efficiency of the pyroelectric energy harvesting and bolometric detection is derived, and is shown to approach the Carnot limit for low temperatures.
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77.70.+a Pyroelectric and electrocaloric effects
77.80.B- Phase transitions and Curie point
73.63.Nm Quantum wires

Ferroelectric microdomains and microdomain arrays recorded in strontium–barium niobate crystals in the field of atomic force microscope

Tatiana R. Volk, Liliya V. Simagina, Radmir V. Gainutdinov, Alla L. Tolstikhina, and Lyudmila I. Ivleva

J. Appl. Phys. 108, 042010 (2010); http://dx.doi.org/10.1063/1.3474965 (8 pages) | Cited 5 times

Online Publication Date: 31 August 2010

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Microdomains and various one-dimensional (1D)- and two-dimensional (2D)-microdomain arrays were formed under dc-voltages applied to the tip of an atomic force microscope (AFM) in ferroelectric SrxBa1−xNb2O6 crystals. Detailed studies of the characteristics of the AFM—recording and decay kinetics of the written arrays have shown that the crucial factors of the stability of a domain array are its dimensionality and discreteness (described by a distance Δ between the recorded point domains forming the array). The dependence of the stability on the discreteness of domain ensembles is analyzed. With decreasing Δ, the decay times of the domain ensembles increases. The stability of 2D arrays (domain squares, complex-shaped arrays composed of the domain ensembles of opposite polarity) by orders of magnitude exceeds that of 1D-arrays (domain chains and lines) provided all factors of recording being the same. As an illustration, the decay time of individual (spatially separated) domains and quasicontinuous domain lines are tens of minutes and about 20 h, respectively, whereas a quasicontionuous domain square persists within at least ten days. We assume the existence of cooperative interactions in microdomain ensembles, which reveal themselves even in arrays consisting of spatially separated point domain.
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77.84.Ek Niobates and tantalates
77.80.Dj Domain structure; hysteresis
77.65.Bn Piezoelectric and electrostrictive constants
68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Piezoresponse force microscopy studies of the triglycine sulfate-based nanofibers

D. V. Isakov, E. de Matos Gomes, B. G. Almeida, I. K. Bdikin, A. M. Martins, and A. L. Kholkin

J. Appl. Phys. 108, 042011 (2010); http://dx.doi.org/10.1063/1.3474966 (4 pages) | Cited 5 times

Online Publication Date: 31 August 2010

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Local ferroelectric and piezoelectric properties of triglycine sulfate (TGS) nanocrystals embedded into poly(ethylene) oxide (PEO) electrospun fibers were examined by piezoresponse force microscopy (PFM). Piezoresponse contrast was found to be strongly dependent on the position being much stronger at the fiber periphery. A model of the distribution of TGS crystals inside the core-shell PEO-TGS fiber structure was proposed. TGS nanocrystals were unevenly distributed along the fiber axis and tend to grow near the surface of the fiber. The volume fraction distribution of the TGS crystals extracted from PFM measurements is in a good agreement with the data obtained from the dielectric constant measurements.
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77.80.-e Ferroelectricity and antiferroelectricity
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
77.22.Ch Permittivity (dielectric function)
77.65.-j Piezoelectricity and electromechanical effects
81.16.-c Methods of micro- and nanofabrication and processing

Local probing of magnetoelectric coupling in multiferroic composites of BaFe12O19–BaTiO3

D. V. Karpinsky, R. C. Pullar, Y. K. Fetisov, K. E. Kamentsev, and A. L. Kholkin

J. Appl. Phys. 108, 042012 (2010); http://dx.doi.org/10.1063/1.3474967 (5 pages) | Cited 6 times

Online Publication Date: 31 August 2010

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The BaFe12O19–BaTiO3 composite ferroelectric/ferromagnetic ceramics were prepared by conventional solid-state sintering technique. The magnetic properties are consistent with the ratio of the magnetic phase present but ferroelectric properties are degraded due to a sufficiently high degree of conductivity in the ceramics. Magnetoelectric coupling was observed at a local level by means of the scanning probe microscopy (SPM). Piezoresponse and magnetic force modes of SPM were both utilized to assess strain-mediated magnetoelectric coupling between neighboring grains. The observed variation in the magnetic signal after the electrical poling with SPM was attested to the changes in the magnetic interactions and magnetic anisotropy leading to broadening of the magnetic domain wall.
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75.85.+t Magnetoelectric effects, multiferroics
77.84.Lf Composite materials
77.80.-e Ferroelectricity and antiferroelectricity
75.60.Ch Domain walls and domain structure
81.20.-n Methods of materials synthesis and materials processing
75.30.Gw Magnetic anisotropy
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