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15 Aug 2010

Volume 108, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

J. Appl. Phys. 108, 041901 (2010); http://dx.doi.org/10.1063/1.3474648 (2 pages)

Sergei V. Kalinin, Nava Setter, and Andrei L. Kholkin
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back to top Lasers, Optics, and Optoelectronics

Effects of distorted lattice and nonequal-valvence substitution on the long lasting phosphorescence of Eu2+ and Gd3+ doped RMg2(PO4)2 (R = Sr,Ba) phosphors

Liyan Liu, Ran Pang, Chengyu Li, and Qiang Su

J. Appl. Phys. 108, 043101 (2010); http://dx.doi.org/10.1063/1.3475989 (5 pages) | Cited 4 times

Online Publication Date: 16 August 2010

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The afterglow of Eu2+ activated SrMg2(PO4)2 can be greatly enhanced by the codoping of Gd3+, as well as an interesting phenomenon of the improvement of the efficiency of the excitation light. However, Eu2+ activated BaMg2(PO4)2 does not show the phosphorescence until the codoping of Gd3+. It is suggested that the codoping of Gd3+ improve the electron storage ability of material by acting as electron-trapping centers resulted from the nonequal-valence substitution of Gd3+ replacing Sr2+ and Ba3+. And the Gd3+-induced enhancement of the excitation efficiency of Eu and Gd codoped SrMg2(PO4)2 is due to the improvement of the energy transfer efficiency caused by the distortion of lattice of Gd3+ located at the sites of Sr2+.
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78.55.Hx Other solid inorganic materials
78.60.-b Other luminescence and radiative recombination
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Enhancement of photovoltaic cell response due to high-refractive-index encapsulants

Ming Ma, Frank W. Mont, David J. Poxson, Jaehee Cho, E. Fred Schubert, Roger E. Welser, and Ashok K. Sood

J. Appl. Phys. 108, 043102 (2010); http://dx.doi.org/10.1063/1.3466980 (3 pages) | Cited 2 times

Online Publication Date: 18 August 2010

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This study compares the electrical output of photovoltaic (PV) cells encapsulated with silicones having different refractive indices to unencapsulated PV cells. It is demonstrated that the optical concentration ratio of dome-shaped concentrator PV systems can be increased by using a higher refractive-index encapsulant. The short-circuit photocurrent of the PV cell having high-refractive-index encapsulation (n = 1.57) is 71% higher than that of the PV cell having a low-refractive-index encapsulation (n = 1.41), and 316% higher than that of the unencapsulated PV cell. These experimental concentration-ratio enhancements are consistent with the theoretical estimates of concentration ratio dependence on the refractive index of the PV concentrator.
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85.60.-q Optoelectronic devices

ZnO-organic hybrid white light emitting diodes grown on flexible plastic using low temperature aqueous chemical method

N. Bano, S. Zaman, A. Zainelabdin, S. Hussain, I. Hussain, O. Nur, and M. Willander

J. Appl. Phys. 108, 043103 (2010); http://dx.doi.org/10.1063/1.3475473 (5 pages) | Cited 13 times

Online Publication Date: 19 August 2010

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We demonstrate white light luminescence from ZnO-organic hybrid light emitting diodes grown at 90 °C on flexible plastic substrate by aqueous chemical growth. The configuration used for the ZnO-organic hybrid white light emitting diodes (WLEDs) consists of a layer of poly (9, 9-dioctylfluorene) (PFO) on poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) coated plastic with top ZnO nanorods. Structural, electrical, and optical properties of these WLEDs were measured and analyzed. Room temperature electroluminescence spectrum reveals a broad emission band covering the range from 420 to 750 nm. In order to distinguish the white light components and contribution of the PFO layer we used a Gaussian function to simulate the experimental data. Color coordinates measurement of the WLED reveals that the emitted light has a white impression. The color rendering index and correlated color temperature of the WLED were calculated to be 68 and 5800 K, respectively.
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85.60.Jb Light-emitting devices
81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
78.60.Fi Electroluminescence
68.55.ag Semiconductors
78.66.-w Optical properties of specific thin films

Modeling high power light-emitting diode spectra and their variation with junction temperature

A. Keppens, W. R. Ryckaert, G. Deconinck, and P. Hanselaer

J. Appl. Phys. 108, 043104 (2010); http://dx.doi.org/10.1063/1.3463411 (7 pages) | Cited 5 times

Online Publication Date: 20 August 2010

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Spectral radiant flux is the primary optical characteristic of a light source, determining the luminous flux and color. Much research is dedicated to the modeling of light-emitting diode (LED) spectra and their temperature dependence, allowing for the simulation of optical properties in various applications. Most of the spectral radiant flux models that have been published so far are purely mathematical. For this paper, spectral radiant fluxes of commercial single color LED packages have been measured in a custom made integrating sphere at several junction temperatures by active cooling and heating with a Peltier element. A spectrum model at 300 K is constructed where the Boltzmann free carrier distribution and carrier temperature are included. Subsequently, the model is extended with the carrier temperature variation, the band gap energy shift, and the nonradiative recombination rate decrease with junction temperature. As a result, the skewness variation, peak frequency shift, and peak value change in the spectrum with temperature can be predicted. The model has been validated by comparing flux and color coordinates of measured and simulated spectra at 340 K junction temperature. In practice, only two spectral flux measurements at different junction temperatures are needed to accurately simulate a single color spectrum at any temperature.
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85.60.Jb Light-emitting devices

Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors

A. A. González Fernández, M. Aceves Mijares, A. Morales Sánchez, and K. M. Leyva

J. Appl. Phys. 108, 043105 (2010); http://dx.doi.org/10.1063/1.3465335 (4 pages) | Cited 2 times

Online Publication Date: 24 August 2010

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Light emitting capacitors (LECs) based on silicon-rich oxide (SRO) were fabricated and its electroluminescent (EL) characteristics studied. Thin SRO films with R0 = 30 were deposited by low pressure chemical vapor deposition and submitted to thermal treatment at 1100 °C for 180 min. Photoluminescence was observed in the SRO films and intense visible EL was obtained from fabricated LECs when stimulated with direct current. Strong intensity, naked eye visible, full area EL was obtained after the application of an electrical treatment. The EL was attributed to the presence of Si related defects and full area emission obtained was due to the optimization of carrier injection through the material by the annulations of preferential conductive paths.
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84.32.Tt Capacitors
85.60.Jb Light-emitting devices

Detection of concealed and buried chemicals by using multifrequency excitations

Yaohui Gao, Meng-Ku Chen, Chia-En Yang, Yun-Ching Chang, Jim Yao, Jiping Cheng, Stuart Yin, Rongqing Hui, Paul Ruffin, Christina Brantley, Eugene Edwards, and Claire Luo

J. Appl. Phys. 108, 043106 (2010); http://dx.doi.org/10.1063/1.3474651 (6 pages)

Online Publication Date: 25 August 2010

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In this paper, we present a new type of concealed and buried chemical detection system by stimulating and enhancing spectroscopic signatures with multifrequency excitations, which includes a low frequency gradient dc electric field, a high frequency microwave field, and higher frequency infrared (IR) radiations. Each excitation frequency plays a unique role. The microwave, which can penetrate into the underground and/or pass through the dielectric covers with low attenuation, could effectively transform its energy into the concealed and buried chemicals and increases its evaporation rate from the sample source. Subsequently, a gradient dc electric field, generated by a Van De Graaff generator, not only serves as a vapor accelerator for efficiently expediting the transportation process of the vapor release from the concealed and buried chemicals but also acts as a vapor concentrator for increasing the chemical concentrations in the detection area, which enables the trace level chemical detection. Finally, the stimulated and enhanced vapors on the surface are detected by the IR spectroscopic fingerprints. Our theoretical and experimental results demonstrate that more than sixfold increase in detection signal can be achieved by using this proposed technology. The proposed technology can also be used for standoff detection of concealed and buried chemicals by adding the remote IR and/or thermal spectroscopic and imaging detection systems.
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29.20.Ba Electrostatic accelerators
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Multiphoton-absorption induced ultraviolet luminescence of ZnO nanorods using low-energy femtosecond pulses

Susanta Kumar Das, Mahua Biswas, Daragh Byrne, Martin Bock, Enda McGlynn, Markus Breusing, and Ruediger Grunwald

J. Appl. Phys. 108, 043107 (2010); http://dx.doi.org/10.1063/1.3468632 (6 pages) | Cited 4 times

Online Publication Date: 25 August 2010

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Multiphoton-absorption (MPA) induced ultraviolet (UV) luminescence of ZnO nanorods grown by vapor phase transport was demonstrated using ultrafast excitation at pulse energies in the few nanojoules range, directly generated by a Ti:sapphire laser oscillator at wavelengths around 800 nm. The dependence of the UV luminescence on the excitation density reveals a two-photon absorption process as the responsible excitation mechanism. The broad spectral bandwidth of the excitation pulses obviously promotes the feasibility of the observed two-photon channel. Theoretical estimates concerning the contribution of nonlinear absorbance strongly support the experimental findings. The essential conditions for proper utilization of this process are discussed.
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78.55.Et II-VI semiconductors
78.67.Qa Nanorods

The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices

D. Naidu, P. M. Smowton, and H. D. Summers

J. Appl. Phys. 108, 043108 (2010); http://dx.doi.org/10.1063/1.3471812 (10 pages)

Online Publication Date: 26 August 2010

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Using the segmented contact method we separate and numerically evaluate the components making up the threshold current density dependence of quantum dot ridge waveguide lasers. An increasing internal optical mode loss and an increasing lateral out-diffusion current are the significant processes in ridges of widths between 4 and 10 μm, with no significant contribution from a deteriorating gain-mode overlap. By fitting a diffusion length model to the lateral out-diffusion process, we extract the ambipolar diffusion length, Ld, as a function of intrinsic carrier injection-level which covers carrier densities appropriate for functioning light-emitting diode and laser devices. The measured dependence fits a diffusion mechanism involving the thermal redistribution of carriers via the wetting-layer and most significantly leads to two regimes where Ld can be reduced in self-assembled quantum-dot systems. Only one of these is shown to be beneficial to the overall efficiency of the device, while the other is at the expense of undesired high-order nonradiative recombination processes at high injection-levels. Covering a peak modal gain range of approximately 5 to 11 cm−1 over injection-levels of 65 to 122 meV at 350 K, this dependence caused Ld to change from 0.75 to 1.50 μm, with the maximum occurring at 84 meV where the peak modal gain is 6 cm−1. Decreasing the temperature to 300 K reduced Ld to <0.75 μm over approximately the same injection-level range.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers

Influence of period and amplitude of microwaviness on KH2PO4 crystal’s laser damage threshold

Mingjun Chen, Mingquan Li, Wei Jiang, and Qiao Xu

J. Appl. Phys. 108, 043109 (2010); http://dx.doi.org/10.1063/1.3462430 (6 pages) | Cited 3 times

Online Publication Date: 31 August 2010

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The laser induced damage threshold (LIDT) has become a technical bottleneck which restricts the application and development of the inertial confinement fusion. Using single point diamond turning method to process KH2PO4 (KDP) crystals, the periodic microwaviness will be left on the machined surface which has a significant impact on the LIDT. In this paper, after acquiring the frequency information of machined surface of KDP crystals with the power spectral density method, we analyze quantitatively the influence of microwaviness on the LIDT of KDP crystal with the Fourier modal theory. Research results indicate that: the surface morphology of KDP crystal is consisted of the subwaviness with different characteristic spatial frequencies; and the reduced amount of the LIDT of KDP crystal leaded by such subwaviness is different; the experimental results of the LIDT are consistent with the theoretical calculations basically; for the machine tool and the processing technology we used, the leading frequency of microwaviness which caused the LIDT decreasing is between (350 μm)−1 and (30 μm)−1, especially between (90 μm)−1 and (180 μm)−1.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
68.35.bt Other materials
79.20.Ds Laser-beam impact phenomena
back to top Plasmas and Electrical Discharges

Spherical and cylindrical imploding and exploding shock waves in plasma system dominated by pair production

Muhammad Noaman ul Haq, R. Saeed, and Asif Shah

J. Appl. Phys. 108, 043301 (2010); http://dx.doi.org/10.1063/1.3475725 (5 pages) | Cited 5 times

Online Publication Date: 18 August 2010

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The propagation of ion acoustic shock waves in cylindrical and spherical geometries has been investigated. The plasma system consists of cold ions, Boltzmannian electrons and positrons. Spherical, cylindrical Korteweg–de Vries–Burger equations have been derived by reductive perturbation technique and their shock behavior is studied by employing finite difference method. Our main emphasis is on the behavior of shock as it moves toward and away from center of spherical and cylindrical geometries. It is noticed, that the shock wave strength and steepness accrues with time as it moves toward the center and shock enervates as it moves away from center. The strength of shock in spherical geometry is found to dominate over shock strength in cylindrical geometry. Positron concentration, kinematic viscosity are also found to have significant effect on the shock structure and propagation. The results may have relevance in the inertial confinement fusion plasmas.
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52.35.Tc Shock waves and discontinuities
52.50.Lp Plasma production and heating by shock waves and compression
52.58.-c Other confinement methods
52.80.Qj Explosions; exploding wires
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)

Optimization of La0.7Ba0.3MnO3−δ complex oxide laser ablation conditions by plume imaging and optical emission spectroscopy

S. Amoruso, C. Aruta, R. Bruzzese, D. Maccariello, L. Maritato, F. Miletto Granozio, P. Orgiani, U. Scotti di Uccio, and X. Wang

J. Appl. Phys. 108, 043302 (2010); http://dx.doi.org/10.1063/1.3467770 (8 pages) | Cited 12 times

Online Publication Date: 18 August 2010

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The properties of thin films of complex oxides, such as La1−xDxMnO3−δ (D = Ba, Ca, Sr, etc.), produced by pulsed laser deposition depend critically on the experimental parameters in which laser ablation is carried out. Here, we report a comparative analysis of the pulsed laser ablation process of La0.7Ba0.3MnO3−δ, in oxygen background, in the ambient pressure range from 10−2 to 1 mbar, typically employed in pulsed laser deposition of manganites. The laser ablation plume was studied by using time-gated imaging and optical emission spectroscopy techniques. It was found that at a pressure of ≈ 10−2 mbar, the plume species arriving at the substrate are characterized by hyperthermal kinetic energy ( ≈ 10 eV), and high degree of excitation. On the contrary, at larger oxygen pressure (0.1–1 mbar), the velocity of plume species reaching the substrate, and their degree of excitation are much reduced by the confining effects of the background gas. These features explain why an appropriate choice of the experimental conditions in which the deposition process is carried out leads to better quality films, providing helpful indications to improve control over the growth process of both La1−xDxMnO3−δ and other perovskitic oxides.
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81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
52.38.Mf Laser ablation

Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities

S. Peter, M. Günther, D. Hauschild, and F. Richter

J. Appl. Phys. 108, 043303 (2010); http://dx.doi.org/10.1063/1.3474989 (12 pages) | Cited 2 times

Online Publication Date: 19 August 2010

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The deposition of hydrogenated amorphous carbon (a-C:H) as well as hydrogenated amorphous silicon carbonitride (SiCN:H) films was investigated in view of a simultaneous realization of a minimum Young’s modulus (>70 GPa), a high electrical insulation ( ≥ 1 MV/cm), a low permittivity and the uniform coverage of microcavities with submillimeter dimensions. For the a-C:H deposition the precursors methane (CH4) and acetylene (C2H2) were used, while SiCN:H films were deposited from mixtures of trimethylsilane [SiH(CH3)3] with nitrogen and argon. To realize the deposition of micrometer thick films with the aforementioned complex requirements at substrate temperatures ≤ 200 °C, several plasma enhanced chemical vapor deposition methods were investigated: the capacitively coupled rf discharge and the microwave electron cyclotron resonance (ECR) plasma, combined with two types of pulsed substrate bias. SiCN:H films deposited at about 1 Pa from ECR plasmas with pulsed high-voltage bias best met the requirements. Pulsed biasing with pulse periods of about 1 μs and amplitudes of about −2 kV was found to be most advantageous for the conformal low temperature coating of the microtrenches, thereby ensuring the required mechanical and insulating film properties.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj Insulators
62.20.de Elastic moduli
77.22.Ch Permittivity (dielectric function)
52.77.Dq Plasma-based ion implantation and deposition

Pressure and arc voltage coupling in dc plasma torches: Identification and extraction of oscillation modes

V. Rat and J. F. Coudert

J. Appl. Phys. 108, 043304 (2010); http://dx.doi.org/10.1063/1.3466982 (8 pages) | Cited 4 times

Online Publication Date: 19 August 2010

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This work is devoted to the instabilities occurring in a plasma torch, such as those found in plasma spraying. These instabilities are responsible for a lack of reproducibility of coatings properties, especially in the case of suspension plasma spraying that is an innovative way to obtain thin coatings of submicron-sized particles. Strong Helmholtz oscillations are highlighted in the plasma flow and it is demonstrated that they overlap with different acoustic modes in addition with the more commonly admitted “restrike” mode, the later being due to rearcing events in the arc region. The instabilities occur in the arc voltage but it is experimentally shown in this paper that the pressure within the torch body presents the same kind of instabilities. Besides, a numerical filtering technique has been adapted to isolate the different instability components. The operating parameters of the plasma torch were varied in order to highlight their influence on the amplitude of the different modes, both for the arc voltage and the pressure.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.75.Hn Plasma torches
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.30.-q Plasma dynamics and flow
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
52.25.-b Plasma properties

Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti–Cu thin films

Vitezslav Stranak, Martin Cada, Zdenek Hubicka, Milan Tichy, and Rainer Hippler

J. Appl. Phys. 108, 043305 (2010); http://dx.doi.org/10.1063/1.3467001 (8 pages) | Cited 11 times

Online Publication Date: 19 August 2010

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Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle ≈ 50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f = 100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti–Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti+,Cu+) which creates a preionized medium.
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81.15.Cd Deposition by sputtering
68.55.at Other materials
52.77.Dq Plasma-based ion implantation and deposition
52.70.Ds Electric and magnetic measurements
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Fi Transport properties

Growth model of binary alloy nanopowders for thermal plasma synthesis

Masaya Shigeta and Takayuki Watanabe

J. Appl. Phys. 108, 043306 (2010); http://dx.doi.org/10.1063/1.3464228 (15 pages) | Cited 7 times

Online Publication Date: 23 August 2010

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A new model is developed for numerical analysis of the entire growth process of binary alloy nanopowders in thermal plasma synthesis. The model can express any nanopowder profile in the particle size-composition distribution (PSCD). Moreover, its numerical solution algorithm is arithmetic and straightforward so that the model is easy to use. By virtue of these features, the model effectively simulates the collective and simultaneous combined process of binary homogeneous nucleation, binary heterogeneous cocondensation, and coagulation among nanoparticles. The effect of the freezing point depression due to nanoscale particle diameters is also considered in the model. In this study, the metal–silicon systems are particularly chosen as representative binary systems involving cocondensation processes. In consequence, the numerical calculation with the present model reveals the growth mechanisms of the Mo–Si and Ti–Si nanopowders by exhibiting their PSCD evolutions. The difference of the materials’ saturation pressures strongly affects the growth behaviors and mature states of the binary alloy nanopowder.
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81.07.Wx Nanopowders
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
52.77.Dq Plasma-based ion implantation and deposition
82.70.-y Disperse systems; complex fluids
81.16.-c Methods of micro- and nanofabrication and processing

Stages in the interaction of deuterium atoms with amorphous hydrogenated carbon films: Isotope exchange, soft-layer formation, and steady-state erosion

G. S. Oehrlein, T. Schwarz-Selinger, K. Schmid, M. Schlüter, and W. Jacob

J. Appl. Phys. 108, 043307 (2010); http://dx.doi.org/10.1063/1.3474988 (13 pages) | Cited 5 times

Online Publication Date: 24 August 2010

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We report studies of the interactions of quantified deuterium (hydrogen) atom beams with hard amorphous hydrogenated carbon films at a substrate temperature of ∼ 330 K in an ultrahigh-vacuum chamber. The modification/erosion of a-C:H (a-C:D) films was monitored in situ by ellipsometry in real time. By interpreting the ellipsometric information and combining it with measurements of the absolute D areal density changes in the a-C:H (a-C:D) films by ion beam analysis as a function of D (H) atom fluence, we are able to distinguish three sequential stages of D interaction with hard a-C:H films. The first stage is replacement of bonded hydrogen by deuterium up to an areal density of ∼ 5×1015 D cm−2 to a depth of ∼ 1.4 nm from the surface. This phase is complete after a deuterium fluence of ≈ 2×1018 cm−2. The effective cross section for isotopic exchange of H with D atoms for the a-C:H layer is found to be σ = 2.0×10−18 cm2, and is close to the cross section for H abstraction from a carbon surface. This may indicate that H abstraction by D from the a-C:H surface is the rate limiting step for isotope exchange in this situation. Hydrogen replacement is followed by creation of additional C–D bonds in the near-surface region and increases the D areal density by about 2.5×1015 D cm−2. By ellipsometry this process can be observed as the formation of a soft a-C:D layer on top of the hard a-C:H bulk film, with the soft layer extending about 1.4 nm from the surface. This stage is complete after a deuterium fluence of about 2×1019 cm−2. Subsequently, steady-state erosion of the a-C:H film takes place. Here, a soft a-C:D layer with roughly constant thickness ( ∼ 1.4 nm) remains on the hard a-C:H substrate and is dynamically reformed as the underlying hard a-C:H film becomes thinner. A similar sequence of processes takes place at a substrate temperature of 650 K, albeit at a much faster rate.
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68.60.Wm Other nonelectronic physical properties
81.65.-b Surface treatments
68.55.-a Thin film structure and morphology
61.43.-j Disordered solids

Phase-shift effect in capacitively coupled plasmas with two radio frequency or very high frequency sources

Xiang Xu, Shu-Xia Zhao, Yu-Ru Zhang, and You-Nian Wang

J. Appl. Phys. 108, 043308 (2010); http://dx.doi.org/10.1063/1.3475376 (6 pages) | Cited 6 times

Online Publication Date: 25 August 2010

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A two-dimensional fluid model was built to study the argon discharge in a capacitively coupled plasma reactor and the full set of Maxwell equations is included in the model to understand the electromagnetic effect in the capacitive discharge. Two electrical sources are applied to the top and bottom electrodes in our simulations and the phase-shift effect is focused on. We distinguish the difference of the phase-shift effect on the plasma uniformity in the traditional radio frequency discharge and in the very high frequency discharge where the standing wave effect dominates. It is found that in the discharges with frequency 13.56 MHz, the control of phase difference can less the influence of the electrostatic edge effect, and it gets the best radial uniformity of plasma density at the phase difference π. But in the very high frequency discharges, the standing wave effect plays an important role. The standing wave effect can be counteracted at the phase difference 0, and be enhanced at the phase difference π. The standing wave effect and the edge effect are balanced at some phase-shift value between 0 and π, which is determined by discharge parameters.
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52.80.-s Electric discharges
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.25.-b Plasma properties
52.65.-y Plasma simulation

Dynamics of the plumes produced by ultrafast laser ablation of metals

T. Donnelly, J. G. Lunney, S. Amoruso, R. Bruzzese, X. Wang, and X. Ni

J. Appl. Phys. 108, 043309 (2010); http://dx.doi.org/10.1063/1.3475149 (13 pages) | Cited 10 times

Online Publication Date: 30 August 2010

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We have analyzed ultrafast laser ablation of a metallic target (Nickel) in high vacuum addressing both expansion dynamics of the various plume components (ionic and nanoparticle) and basic properties of the ultrafast laser ablation process. While the ion temporal profile and ion angular distribution were analyzed by means of Langmuir ion probe technique, the angular distribution of the nanoparticulate component was characterized by measuring the thickness map of deposition on a transparent substrate. The amount of ablated material per pulse was found by applying scanning white light interferometry to craters produced on a stationary target. We have also compared the angular distribution of both the ionic and nanoparticle components with the Anisimov model. While the agreement for the ion angular distribution is very good at any laser fluence (from ablation threshold up to ≈ 1 J/cm2), some discrepancies of nanoparticle plume angular distribution at fluencies above ≈ 0.4 J/cm2 are interpreted in terms of the influence of the pressure exerted by the nascent atomic plasma plume on the initial hydrodynamic evolution of the nanoparticle component. Finally, analyses of the fluence threshold and maximum ablation depth were also carried out, and compared to predictions of theoretical models. Our results indicate that the absorbed energy is spread over a length comparable with the electron diffusion depth Lc ( ≈ 30 nm) of Ni on the timescale of electron-phonon equilibration and that a logarithmic dependence is well-suited for the description of the variation in the ablation depth on laser fluence in the investigated range.
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52.38.Mf Laser ablation
52.70.Ds Electric and magnetic measurements
61.82.-d Radiation effects on specific materials
79.20.Eb Laser ablation
61.82.Bg Metals and alloys
back to top Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

R. Chandrasekaran, T. D. Moustakas, A. S. Ozcan, K. F. Ludwig, L. Zhou, and David J. Smith

J. Appl. Phys. 108, 043501 (2010); http://dx.doi.org/10.1063/1.3475521 (4 pages) | Cited 4 times

Online Publication Date: 16 August 2010

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This paper reports the growth by molecular beam epitaxy of AlN and GaN thin films on R-plane sapphire substrates. Contrary to previous findings that GaN grows with its (11math0) A-plane parallel to the (1math02) R-plane of sapphire, our results indicate that the crystallographic orientation of the III-nitride films is strongly dependent on the kinetic conditions of growth for the GaN or AlN buffer layers. Thus, group III-rich conditions for growth of either GaN or AlN buffers result in nitride films having (11math0) planes parallel to the sapphire surface, and basal-plane stacking faults parallel to the growth direction. The growth of these buffers under N-rich conditions instead leads to nitride films with (11math6) planes parallel to the sapphire surface, with inclined c-plane stacking faults that often terminate threading dislocations. Moreover, electron microscope observations indicate that slight miscut ( ∼ 0.5°) of the R-plane sapphire substrate almost completely suppresses the formation of twinning defects in the (11math6) GaN films.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
68.55.J- Morphology of films
61.66.Fn Inorganic compounds
61.72.Nn Stacking faults and other planar or extended defects

Amorphous copper tungsten oxide with tunable band gaps

Le Chen, Sudhakar Shet, Houwen Tang, Kwang-soon Ahn, Heli Wang, Yanfa Yan, John Turner, and Mowafak Al-Jassim

J. Appl. Phys. 108, 043502 (2010); http://dx.doi.org/10.1063/1.3475714 (5 pages) | Cited 3 times

Online Publication Date: 16 August 2010

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We report on the synthesis of amorphous copper tungsten oxide thin films with tunable band gaps. The thin films are synthesized by the magnetron cosputtering method. We find that due to the amorphous nature, the Cu-to-W ratio in the films can be varied without the limit of the solubility (or phase separation) under appropriate conditions. As a result, the band gap and conductivity type of the films can be tuned by controlling the film composition. Unfortunately, the amorphous copper tungsten oxides are not stable in aqueous solution and are not suitable for the application of photoelectrochemical splitting of water. Nonetheless, it provides an alternative approach to search for transition metal oxides with tunable band gaps.
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81.05.Gc Amorphous semiconductors
81.15.Cd Deposition by sputtering
73.61.Jc Amorphous semiconductors; glasses
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
68.55.ag Semiconductors

Nanoscale precipitation patterns in carbon–nickel nanocomposite thin films: Period and tilt control via ion energy and deposition angle

Gintautas Abrasonis, Thomas W. H. Oates, György J. Kovács, Jörg Grenzer, Per O. Å. Persson, Karl-Heinz H. Heinig, Andrius Martinavičius, Nicole Jeutter, Carsten Baehtz, Mark Tucker, Marcela M. M. Bilek, and Wolfhard Möller

J. Appl. Phys. 108, 043503 (2010); http://dx.doi.org/10.1063/1.3467521 (7 pages) | Cited 4 times

Online Publication Date: 16 August 2010

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Periodic precipitation patterns in C:Ni nanocomposites grown by energetic ion codeposition are investigated. Films were grown at room temperature by ionized physical vapor deposition using a pulsed filtered cathodic vacuum arc. We reveal the role of the film composition, ion energy and incidence angle on the film morphology using transmission electron microscopy and grazing incidence small angle x-ray scattering. Under these growth conditions, phase separation occurs in a thin surface layer which has a high atomic mobility due to energetic ion impacts. This layer is an advancing reaction front, which switches to an oscillatory mode, producing periodic precipitation patterns. Our results show that the ion induced atomic mobility is not random, as it would be in the case of thermal diffusion but conserves to a large extent the initial direction of the incoming ions. This results in a tilted pattern under oblique ion incidence. A dependence of the nanopattern periodicity and tilt on the growth parameters is established and pattern morphology control via ion velocity is demonstrated.
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68.55.aj Insulators
64.75.Jk Phase separation and segregation in nanoscale systems
64.75.St Phase separation and segregation in thin films
81.16.Rf Micro- and nanoscale pattern formation
78.70.Ck X-ray scattering
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

Parag Banerjee, Won-Jae Lee, Ki-Ryeol Bae, Sang Bok Lee, and Gary W. Rubloff

J. Appl. Phys. 108, 043504 (2010); http://dx.doi.org/10.1063/1.3466987 (7 pages) | Cited 42 times

Online Publication Date: 17 August 2010

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Al-doped ZnO (AZO) films of ∼ 100 nm thickness with various Al doping were prepared at 150 °C by atomic layer deposition on quartz substrates. At low Al doping, the films were strongly textured along the [100] direction, while at higher Al doping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnO film, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7 cm2/V s. Film resistivity reached a minima of 4.4×10−3 Ω cm whereas the carrier concentration reached a maxima of 1.7×1020 cm−3, at 3 at. % Al. The band gap of AZO films varied from 3.23 eV for undoped ZnO films to 3.73 eV for AZO films with 24.6 at. % Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at. % is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.
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73.61.Ga II-VI semiconductors
78.66.Hf II-VI semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Ps Atomic force microscopy (AFM)
61.72.U- Doping and impurity implantation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
72.80.Ey III-V and II-VI semiconductors

The influence of Pt redistribution on Ni1−xPtxSi growth properties

J. Demeulemeester, D. Smeets, C. M. Comrie, C. Van Bockstael, W. Knaepen, C. Detavernier, K. Temst, and A. Vantomme

J. Appl. Phys. 108, 043505 (2010); http://dx.doi.org/10.1063/1.3455873 (11 pages) | Cited 8 times

Online Publication Date: 18 August 2010

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We have studied the influence of Pt on the growth of Ni silicide thin films by examining the Pt redistribution during silicide growth. Three different initial Pt configurations were investigated, i.e., a Pt alloy (Ni+Pt/〈Si〉), a Pt capping layer (Pt/Ni/〈Si〉) and a Pt interlayer (Ni/Pt/〈Si〉), all containing 7 at. % Pt relative to the Ni content. The Pt redistribution was probed using in situ real-time Rutherford backscattering spectrometry (RBS) whereas the phase sequence was monitored during the solid phase reaction (SPR) using in situ real-time x-ray diffraction. We found that the capping layer and alloy exhibit a SPR comparable to the pure Ni/〈Si〉 system, whereas Pt added as an interlayer has a much more drastic influence on the Ni silicide phase sequence. Nevertheless, for all initial sample configurations, Pt redistributes in an erratic way. This phenomenon can be assigned to the low solubility of Pt in Ni2Si compared to NiSi and the high mobility of Pt in Ni2Si compared to pure Ni. Real-time RBS further revealed that the crucial issue determining the growth properties of each silicide phase is the Pt concentration at the Si interface during the initial stages of phase formation. The formation of areas rich in Pt reduce the Ni silicide growth kinetics which influences the phase sequence and properties of the silicides.
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68.55.aj Insulators
64.75.Bc Solubility
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Compositional dependent thin film stress states

B. Fu and G. B. Thompson

J. Appl. Phys. 108, 043506 (2010); http://dx.doi.org/10.1063/1.3462431 (6 pages) | Cited 3 times

Online Publication Date: 18 August 2010

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This paper addresses in situ stress evolution of two-component FexPt1−x, where x spanned 0 to 1, alloy thin films. The stresses of the high-temperature, quenched-in, solid solution phase was determined by in situ wafer curvature measurements during ambient temperature growth. The measured stresses were shown to be compositional dependent and spanned both compressive and tensile stress states. Under specific growth conditions, a “zero-stress” state could be achieved. The alloy stress states did not show any significant stress recovery upon ceasing the deposition, i.e. the stress state during growth was retained in the film. X-ray diffraction, transmission electron microscopy, and atom probe tomography were used to characterize the microstructures of each thin film. The evolution of the stress state with composition is described in terms of a chemical potential term for preferential segregation of one species in the alloy to the grain boundaries.
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68.60.Bs Mechanical and acoustical properties
62.20.F- Deformation and plasticity
65.40.G- Other thermodynamical quantities
81.40.Lm Deformation, plasticity, and creep
68.55.at Other materials
68.55.J- Morphology of films
81.30.Mh Solid-phase precipitation
61.72.Mm Grain and twin boundaries

Thermoreflectance of metal transducers for time-domain thermoreflectance

Yuxin Wang, Ji Yong Park, Yee Kan Koh, and David G. Cahill

J. Appl. Phys. 108, 043507 (2010); http://dx.doi.org/10.1063/1.3457151 (4 pages) | Cited 5 times

Online Publication Date: 18 August 2010

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We report measurements of the temperature dependence of the optical reflectivity, i.e., the thermoreflectance dR/dT, of 18 metallic elements at two laser wavelengths commonly used in ultrafast pump-probe experiments, 1.55 μm and 785 nm. The thermoreflectance is determined using time-domain thermoreflectance combined with measurements of the laser power and spot size and comparisons between the data and quantitative modeling of the temperature evolution at the surface of the sample. At a laser wavelength of 1.55 μm, four elements within this set of samples, Nb, Re, Ta, and V, have dR/dT comparable to or larger than 0.6×10−4 K−1. At a laser wavelength of 785 nm, the highest thermoreflectance is found in Al and Ta, dR/dT ≈ 2.1×10−4 K−1 and 2.2×10−4 K−1, respectively. Alloying Au with 5% Pd increases the optical absorption by a factor of 3 and the thermoreflectance by a factor of 2.
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78.20.N- Thermo-optic effects
07.07.Mp Transducers
42.25.Bs Wave propagation, transmission and absorption
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
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