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Journal of Applied Physics / Volume 108 / Issue 4 / ARTICLES / Magnetism and Superconductivity

J. Appl. Phys. 108, 043909 (2010); http://dx.doi.org/10.1063/1.3463408 (6 pages)

A simple bilayered magnetoelectric random access memory cell based on electric-field controllable domain structure

Jia-Mian Hu, Zheng Li, Jing Wang, Jing Ma, Y. H. Lin, and C. W. Nan

Department of Materials Science and Engineering and State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China

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(Received 28 May 2010; accepted 15 June 2010; published online 18 August 2010)

By considering the domain wall scattering in ferromagnetic striped-domain structure, we present a simple bilayered magnetoelectric random access memory cell with a ferromagnetic thin film grown on a ferroelectric layer. The calculations show that the striped-domain structure in the ferromagnetic film can change into a single-domain structure upon applying an electric field to the ferroelectric layer. As a result, the presence (absence) of the domain walls in response to the striped-domain (single-domain) state can cause an abrupt change in the film resistivity, which could be employed for memory applications accordingly.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrical resistivity, ferroelectric materials, ferromagnetic materials, magnetic domain walls, magnetic thin films, magnetoelectronics, random-access storage

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3463408

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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