Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities

Peter, S.; Günther, M.; Hauschild, D.; Richter, F.

doi:doi:10.1063/1.3474989

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Optimization of La_0.7Ba_0.3MnO_3−δ complex oxide laser ablation conditions by plume imaging and optical emission spectroscopy

The properties of thin films of complex oxides, such as La1−xDxMnO3−δ (D = Ba, Ca, Sr, etc.), produced by pulsed laser deposition depend critically on the experimental parameters in which laser ablation is carried out. Here, we report a comparative analysis of the pulsed laser ablation process of La0.7Ba0.3MnO3−δ, in oxygen background, in the ambient pressure range from 10−2 to 1 mbar, typically employed in pulsed laser deposition of manganites. The laser ablation plume was studied by using tim...

Pressure and arc voltage coupling in dc plasma torches: Identification and extraction of oscillation modes

This work is devoted to the instabilities occurring in a plasma torch, such as those found in plasma spraying. These instabilities are responsible for a lack of reproducibility of coatings properties, especially in the case of suspension plasma spraying that is an innovative way to obtain thin coatings of submicron-sized particles. Strong Helmholtz oscillations are highlighted in the plasma flow and it is demonstrated that they overlap with different acoustic modes in addition with the more com...

The deposition of hydrogenated amorphous carbon (a-C:H) as well as hydrogenated amorphous silicon carbonitride (SiCN:H) films was investigated in view of a simultaneous realization of a minimum Young’s modulus (>70 GPa), a high electrical insulation ( ≥ 1 MV/cm), a low permittivity and the uniform coverage of microcavities with submillimeter dimensions. For the a-C:H deposition the precursors methane (CH₄) and acetylene (C₂H₂) were used, while SiCN:H films were deposited from mixtures of trimethylsilane [SiH(CH₃)₃] with nitrogen and argon. To realize the deposition of micrometer thick films with the aforementioned complex requirements at substrate temperatures ≤ 200 °C, several plasma enhanced chemical vapor deposition methods were investigated: the capacitively coupled rf discharge and the microwave electron cyclotron resonance (ECR) plasma, combined with two types of pulsed substrate bias. SiCN:H films deposited at about 1 Pa from ECR plasmas with pulsed high-voltage bias best met the requirements. Pulsed biasing with pulse periods of about 1 μs and amplitudes of about −2 kV was found to be most advantageous for the conformal low temperature coating of the microtrenches, thereby ensuring the required mechanical and insulating film properties.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
1. Properties of a-C:H films deposited from rf discharge
2. SiCN:H films deposited from rf discharge
3. PECVD of SiCN:H using ECR plasma and MF substrate bias
4. PECVD of SiCN:H using ECR plasma and microsecond-pulsed substrate bias
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

carbon, elastic constants, insulation, microcavities, permittivity, plasma CVD, silicon compounds, Young's modulus

PACS

81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj

Insulators
62.20.de

Elastic moduli
77.22.Ch

Permittivity (dielectric function)
52.77.Dq

Plasma-based ion implantation and deposition

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3474989

PUBLICATION DATA

ISSN

0021-8979 (print)

1089-7550 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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