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Journal of Applied Physics / Volume 108 / Issue 4 / ARTICLES / Lasers, Optics, and Optoelectronics

J. Appl. Phys. 108, 043105 (2010); http://dx.doi.org/10.1063/1.3465335 (4 pages)

Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors

A. A. González Fernández1, M. Aceves Mijares1, A. Morales Sánchez1,2, and K. M. Leyva1

1INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla 72000, Mexico
2CNyN-UNAM, Apdo. 14, Ensenada B. C. 22800, Mexico

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(Received 9 March 2010; accepted 16 June 2010; published online 24 August 2010)

Light emitting capacitors (LECs) based on silicon-rich oxide (SRO) were fabricated and its electroluminescent (EL) characteristics studied. Thin SRO films with R0 = 30 were deposited by low pressure chemical vapor deposition and submitted to thermal treatment at 1100 °C for 180 min. Photoluminescence was observed in the SRO films and intense visible EL was obtained from fabricated LECs when stimulated with direct current. Strong intensity, naked eye visible, full area EL was obtained after the application of an electrical treatment. The EL was attributed to the presence of Si related defects and full area emission obtained was due to the optimization of carrier injection through the material by the annulations of preferential conductive paths.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

chemical vapour deposition, electroluminescence, light emitting devices, photoluminescence, silicon compounds, thin film capacitors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3465335

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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