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Journal of Applied Physics / Volume 108 / Issue 4 / ARTICLES / Lasers, Optics, and Optoelectronics

J. Appl. Phys. 108, 043101 (2010); http://dx.doi.org/10.1063/1.3475989 (5 pages)

Effects of distorted lattice and nonequal-valvence substitution on the long lasting phosphorescence of Eu2+ and Gd3+ doped RMg2(PO4)2 (R = Sr,Ba) phosphors

Liyan Liu1, Ran Pang1, Chengyu Li1, and Qiang Su1,2

1State Key Laboratory of Application of Rare Earth Resources, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
2School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, China

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(Received 12 November 2009; accepted 12 July 2010; published online 16 August 2010)

The afterglow of Eu2+ activated SrMg2(PO4)2 can be greatly enhanced by the codoping of Gd3+, as well as an interesting phenomenon of the improvement of the efficiency of the excitation light. However, Eu2+ activated BaMg2(PO4)2 does not show the phosphorescence until the codoping of Gd3+. It is suggested that the codoping of Gd3+ improve the electron storage ability of material by acting as electron-trapping centers resulted from the nonequal-valence substitution of Gd3+ replacing Sr2+ and Ba3+. And the Gd3+-induced enhancement of the excitation efficiency of Eu and Gd codoped SrMg2(PO4)2 is due to the improvement of the energy transfer efficiency caused by the distortion of lattice of Gd3+ located at the sites of Sr2+.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL
  3. RESULTS
    1. The PL of the samples
    2. The LLP of the samples
    3. TL curves of the samples
  4. DISCUSSION
  5. CONCLUSION

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KEYWORDS and PACS

Keywords

barium compounds, crystal defects, distortion, electron traps, europium, excited states, gadolinium, magnesium compounds, phosphorescence, phosphors, strontium compounds

PACS

  • 78.55.Hx

    Other solid inorganic materials

  • 78.60.-b

    Other luminescence and radiative recombination

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475989

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    T. Kinoshita, M. Yamazaki, H. Kawazoe, and H. Hosono, J. Appl. Phys. 86, 3729 (1999)JAPIAU000086000007003729000001.

    J. Qiu, K. Miura, H. Inouye, Y. Kondo, T. Mitsuyu, and K. Hirao, Appl. Phys. Lett. 73, 1763 (1998)APPLAB000073000013001763000001.

    C. Li and Q. Su, Appl. Phys. Lett. 85, 2190 (2004)APPLAB000085000012002190000001.

    L. Y. Liu, C. Y. Li, S. B. Wang, and Q. Su, Appl. Phys. Lett. 88, 241107 (2006)APPLAB000088000024241107000001.


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