Analysis of the degradation induced by focused ion Ga3+ beam for the realization of piezoelectric nanostructures

Rémiens, D.; Liang, R. H.; Soyer, C.; Deresmes, D.; Troadec, D.; Quignon, S.; Da Costa, A.; Desfeux, R.

doi:doi:10.1063/1.3474963

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Investigation of the ferroelectric-relaxor transition in PbMg_1/3Nb_2/3O₃–PbTiO₃ ceramics by piezoresponse force microscopy

The spontaneous transition between the ferroelectric and relaxor states was investigated in 0.86PbMg1/3Nb2/3O3–0.14PbTiO3 ceramics using piezoresponse force microscopy (PFM). Macroscopically, the transition from the ferroelectric to relaxor phases manifests itself by an anomaly in the temperature dependences of the dielectric permittivity and by a sharp decline of the remanent polarization. Alternatively, PFM reveals a decay of the ferroelectric micron-size domains at the macroscopic Curie temp...

Pyroelectric response of ferroelectric nanowires: Size effect and electric energy harvesting

The size effect on pyroelectric response of ferroelectric nanowires is analyzed. The pyroelectric coefficient strongly increases with the wire radius decrease and diverges at critical radius Rcr corresponding to the size-driven transition into paraelectric phase. Size-driven enhancement of pyroelectric coupling leads to the giant pyroelectric current and voltage generation by the polarized ferroelectric nanoparticles in response to the temperature fluctuation. The maximum efficiency of the pyro...

Piezoelectric nanostructures (islands of dimensions in the lateral size range 50–500 nm) have been fabricated by focused Ga³⁺ ion beam (FIB) etching on PbZr_0.54Ti_0.46O₃ thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution of electromechanical activity measured by means of local piezoelectric hysteresis loops produced by piezoresponse force microscopy. The analysis of surface potential is performed by kelvin force microscopy and the measurement of current-voltage curves is carried out by conducting atomic force microscopy. Two kinds of structures, namely one based on crystallized films and the other based on amorphous ones, were studied. In this latter case, the amorphous films are postannealed after etching to obtain crystallized structure. For the structures based on the crystallized and then etched films, no piezoelectric signal was registered that evidences a serious degradation of material induced by Ga³⁺ ion implantation. For the structures based on the films etched in amorphous state and then crystallized, the piezoresponse signal was near to that of the reference films (crystallized and not etched) whatever were the ion dose and the island dimensions. Even for very small lateral size (50 nm), no size effect was observed. The island shapes fabricated by Ga³⁺ FIB etching process (islands with less than 50 nm lateral size) show a limitation of FIB processing and electron beam lithography seems to be necessary.

Article Outline

INTRODUCTION
DESCRIPTION OF THE STRUCTURES AND EXPERIMENTAL SET UP
RESULTS AND DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

atomic force microscopy, electromechanical effects, electron beam lithography, focused ion beam technology, ion implantation, island structure, lead compounds, nanolithography, nanostructured materials, piezoelectric materials, sputter etching, surface potential, zirconium compounds

PACS

81.16.Nd

Micro- and nanolithography
61.80.Jh

Ion radiation effects
77.65.-j

Piezoelectricity and electromechanical effects
61.46.-w

Structure of nanoscale materials
52.77.Dq

Plasma-based ion implantation and deposition
81.65.Cf

Surface cleaning, etching, patterning

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http://dx.doi.org/10.1063/1.3474963

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ISSN

0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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