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J. Appl. Phys. 108, 042005 (2010); http://dx.doi.org/10.1063/1.3474960 (4 pages)

Individual switching of film-based nanoscale epitaxial ferroelectric capacitors

Yunseok Kim1, Hee Han2, Brian J. Rodriguez1, Ionela Vrejoiu1, Woo Lee3, Sunggi Baik2, Dietrich Hesse1, and Marin Alexe1

1Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
2Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
3Korea Research Institute of Standards and Science (KRISS), Yuseong, 305-340 Daejeon, Republic of Korea

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(Received 5 October 2009; accepted 22 April 2010; published online 31 August 2010)

We have investigated the individual switching of nanoscale capacitors by piezoresponse force microscopy. Nanoscale epitaxial ferroelectric capacitors with terabyte per inch square equivalent density were fabricated by the deposition of top electrodes onto a pulsed laser deposited lead zirconate titanate thin film by electron beam evaporation through ultrathin anodic aluminum oxide membrane stencil masks. Using bias pulses, the nanoscale capacitors were uniformly switched and proved to be individually addressable. These film-based nanoscale capacitors might be a feasible alternative for high-density mass storage memory applications with near terabyte per inch square density due to the absence of any cross-talk effects.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. SUMMARY

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KEYWORDS and PACS

PACS

  • 85.50.-n

    Dielectric, ferroelectric, and piezoelectric devices

  • 84.32.Tt

    Capacitors

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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