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15 Dec 2010

Volume 108, Issue 12, Articles (12xxxx)

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J. Appl. Phys. 108, 121101 (2010); http://dx.doi.org/10.1063/1.3503505 (12 pages)

J. Martin, T. Tritt, and C. Uher
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back to top Interdisciplinary and General Physics

Transmission and total reflection of subhertz electromagnetic waves at the earth-atmosphere interface

Toshiyuki Shiozawa

J. Appl. Phys. 108, 124901 (2010); http://dx.doi.org/10.1063/1.3520670 (8 pages) | Cited 1 time

Online Publication Date: 16 December 2010

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For the purpose of providing for a theoretical background for the study of electromagnetic fields generated by precursory effects of earthquakes, the problem of transmission and total reflection at the earth-atmosphere interface is investigated in detail for a subhertz plane electromagnetic wave incident from the earth’s crust. The term “subhertz” means “below 1 Hz.” First, for the special case of normal incidence, the overall power transmission coefficient at the earth–atmosphere interface is found to take a maximum value at a definite frequency f0 which is inversely proportional to the square of the depth of a virtual hypocenter. A typical value of f0 falls around 0.01 Hz. For oblique incidence as well, this feature of the overall power transmission coefficient is retained except in the vicinity of the critical angle of incidence for the H-wave. At the critical angle of incidence, the power flow carried by a surface wave along the interface becomes anomalously large for the H-wave. However, over a wide range of angles of incidence greater than the critical angle, the power flow carried by the E-wave exceeds that carried by the H-wave by orders of magnitude. Finally, the energy conservation relations for the incident, reflected, and transmitted waves at the earth-atmosphere interface are discussed. For an incident wave coming from the earth’s crust, the interactive power between the incident and reflected waves plays a crucial role for the conservation of energy at the interface.
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92.60.Ta Electromagnetic wave propagation
91.30.Px Earthquakes
91.60.Pn Magnetic and electrical properties

High-level incorporation of antimony in germanium by laser annealing

E. Bruno, G. G. Scapellato, G. Bisognin, E. Carria, L. Romano, A. Carnera, and F. Priolo

J. Appl. Phys. 108, 124902 (2010); http://dx.doi.org/10.1063/1.3520671 (6 pages) | Cited 7 times

Online Publication Date: 16 December 2010

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In this work we investigate pulse laser annealing as an alternative approach to reach high-level incorporation of Sb in substitutional location in crystalline germanium. Laser irradiation is demonstrated to recover also those structural defects, like honeycomb structures, that form during high-fluence heavy-ion implantations in Ge and that cannot be eliminated by conventional thermal treatments. Indeed, concentrations of substitutional Sb higher than 1×1021 at./cm3 have been obtained, well above the solid solubility of Sb in Ge. The strain induced on the Ge host lattice is also investigated, evidencing that the obtained Sb doped Ge layer is pseudomorphic to the Ge substrate while positively strained by the substitutional Sb atoms present within the Ge matrix. The kinetics of this Sb-rich Ge alloy phase is finally investigated, showing that most of Sb goes out of lattice with increasing the annealing temperature up to 488 °C, leading to a decrease in the related lattice deformation. These results are very relevant for the future high-mobility channel technology.
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81.05.Cy Elemental semiconductors
62.20.F- Deformation and plasticity
61.80.Jh Ion radiation effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing

Quantitative analyses of oxidation states for cubic SrMnO3 and orthorhombic SrMnO2.5 with electron energy loss spectroscopy

S. Kobayashi, Y. Tokuda, T. Mizoguchi, N. Shibata, Y. Sato, Y. Ikuhara, and T. Yamamoto

J. Appl. Phys. 108, 124903 (2010); http://dx.doi.org/10.1063/1.3520655 (4 pages) | Cited 2 times

Online Publication Date: 21 December 2010

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The oxidation state of Mn in cubic SrMnO3 and orthorhombic SrMnO2.5 was investigated by electron energy loss (EEL) spectroscopy. Change in the oxidation state of Mn produced some spectral changes in the O-K edge as well as in the Mn-L2,3 edge EEL spectra. This study demonstrated that the oxidation state of Mn and the amount of oxygen vacancies in cubic SrMnO3 and orthorhombic SrMnO2.5 could be quantified by analyzing the features of the O-K edge spectrum and the Mn L3/L2 ratio in the Mn-L2,3 edge spectrum. Our quantitative analysis showed that the spectral changes in the Mn-L2,3 edge were mainly caused by the oxidation state of Mn, whereas those in the O-K edge could be sensitive to both the oxidation state of Mn and to lattice distortions.
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61.66.Fn Inorganic compounds
79.20.Uv Electron energy loss spectroscopy
61.72.jd Vacancies

Distributed energy tapestry for heating the landscape

L. A. O. Rocha, S. Lorente, and A. Bejan

J. Appl. Phys. 108, 124904 (2010); http://dx.doi.org/10.1063/1.3516155 (7 pages) | Cited 3 times

Online Publication Date: 22 December 2010

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Here we show that the production and use of heating on an area must be distributed in clusters organized such that the losses associated with centers of production are balanced by the losses associated with distribution lines. The energy needs increase in time because the population density and the individual need increase. We consider only the increase in the individual need in time. We illustrate the “distributed energy systems” concept with the production and distribution of hot water on an area. Four classes of designs are analyzed and compared: (0) individual, i.e., one water heater for one user, (r) radial, i.e., N users supplied via radial pipes from a central heater, (2) dendritic network constructed by pairing N users around a central heating, and (4) dendritic network constructed by quadrupling the elemental areas occupied by the users. We show that there is an optimal cluster size (N) as a tradeoff between central losses and distributed losses. We also discover that several distinct (abrupt) design “transitions” must exist: the recommended design changes through designs 0, r, 2, and 4, as the amount of water used by each individual increases in time with the standard of living.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
88.10.cn Heating and cooling of buildings; space heating

Semianalytic model of electron pulse propagation: Magnetic lenses and rf pulse compression cavities

Joel A. Berger and W. Andreas Schroeder

J. Appl. Phys. 108, 124905 (2010); http://dx.doi.org/10.1063/1.3512847 (12 pages) | Cited 3 times

Online Publication Date: 23 December 2010

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The analytical Gaussian electron pulse propagation model of Michalik and Sipe [J. Appl. Phys. 99, 054908 (2006)] is extended to include the action of external forces on the pulse. The resultant ability to simulate efficiently the effect of electron optical elements (e.g., magnetic lenses and radio-frequency cavities) allows for the rapid assessment of electron pulse delivery systems in time-resolved ultrafast electron diffraction and microscopy experiments.
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41.85.-p Beam optics

Entanglement of charge transfer, hole doping, exchange interaction, and octahedron tilting angle and their influence on the conductivity of La1−xSrxFe0.75Ni0.25O3−δ: A combination of x-ray spectroscopy and diffraction

Selma Erat, Artur Braun, Cinthia Piamonteze, Zhi Liu, Alejandro Ovalle, Hansjürgen Schindler, Thomas Graule, and Ludwig J. Gauckler

J. Appl. Phys. 108, 124906 (2010); http://dx.doi.org/10.1063/1.3517822 (8 pages) | Cited 2 times

Online Publication Date: 23 December 2010

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Substitution of La by Sr in the 25% Ni doped charge transfer insulator LaFeO3 leads to structural changes that inflect the electrical conductivity, which is caused by small polaron hopping via charge transfer and exchange interactions. The substitution forms electron holes and causes a structural transition from orthorhombic to rhombohedral symmetry, and then to cubic symmetry. The structural crossover is accompanied by a crossover from the Fe3+–O2−–Fe3+ superexchange interaction to the Fe3+–O2−–Fe4+ double exchange interaction in the course of substitution, as evidenced by a considerable increase in the conductivity at ambient temperature. The charge transfer and exchange interactions depend on the superexchange angle, which approaches 180° upon increasing Sr concentration. An increase in superexchange angle leads to an increase in overlapping between the O 2p and the Fe/Ni 3d orbitals.
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82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
61.72.U- Doping and impurity implantation
75.30.Et Exchange and superexchange interactions
78.70.-g Interactions of particles and radiation with matter
71.38.-k Polarons and electron-phonon interactions
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling

Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale

G. Cellere, A. Paccagnella, M. Murat, J. Barak, A. Akkerman, R. Harboe-Sorensen, A. Virtanen, A. Visconti, and M. Bonanomi

J. Appl. Phys. 108, 124907 (2010); http://dx.doi.org/10.1063/1.3514167 (19 pages)

Online Publication Date: 23 December 2010

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Swift heavy ions impacting on matter lose energy through the creation of dense tracks of charges. The study of the space and time evolution of energy exchange allows understanding the single event effects behavior in advanced microelectronic devices. In particular, the shrinking of minimum feature size of most advanced memory devices makes them very interesting test vehicles to study these effects since the device and the track dimensions are comparable; hence, measured effects are directly correlated with the time and space evolution of the energy release. In this work we are studying the time and space evolution of ion tracks by using advanced non volatile memories and Monte Carlo simulations. Experimental results are very well explained by the theoretical calculations.
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61.82.Ms Insulators
84.30.Sk Pulse and digital circuits
61.80.Jh Ion radiation effects

Elastic strain and dopant activation in ion implanted strained Si nanowires

R. A. Minamisawa, S. Habicht, D. Buca, R. Carius, S. Trellenkamp, K. K. Bourdelle, and S. Mantl

J. Appl. Phys. 108, 124908 (2010); http://dx.doi.org/10.1063/1.3520665 (9 pages) | Cited 6 times

Online Publication Date: 23 December 2010

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Strained Si nanowires (NWs) are attractive for deeply-scaled complementary metal-oxide-semiconductor devices due to the combination of enhanced carrier mobility and excellent electrostatic control as was demonstrated with trigate metal-oxide-semiconductor field effect transistors. The challenge in using strained Si NWs for devices is to preserve the elastic strain during the required processing steps. In this work we investigated the influence of fundamental processing steps like patterning and dopant ion implantation on the structural and transport properties of strained Si layers and NWs on silicon-on-insulator (SOI) substrates. NWs with widths down to 35 nm, fabricated on 25 nm strained SOI and implanted to doses ranging from 5×1014 to 2×1015 ions/cm2 were investigated. We show that strain conservation and a low sheet resistivity of 6.2×10−4 Ω cm, close to the layer resistivity, can only be obtained if the NWs are patterned on doped layers. For NWs directly implanted to doses above 1×1015 ions/cm2, complete strain relaxation and structural disorder by solid phase recrystallization were observed. In both cases, NWs with widths smaller than 55 nm exhibit an increased specific resistivity.
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85.30.Tv Field effect devices
61.72.uf Ge and Si
73.61.Cw Elemental semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

One-way mode transmission in one-dimensional phononic crystal plates

Xuefeng Zhu (祝雪丰), Xinye Zou (邹欣晔), Bin Liang (梁彬), and Jianchun Cheng (程建春)

J. Appl. Phys. 108, 124909 (2010); http://dx.doi.org/10.1063/1.3520491 (5 pages) | Cited 12 times

Online Publication Date: 28 December 2010

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We investigate theoretically the band structures of one-dimensional phononic crystal (PC) plates with both antisymmetric and symmetric structures, and show how unidirectional transmission behavior can be obtained for either antisymmetric waves (A modes) or symmetric waves (S modes) by exploiting mode conversion and selection in the linear plate systems. The theoretical approach is illustrated for one PC plate example where unidirectional transmission behavior is obtained in certain frequency bands. Employing harmonic frequency analysis, we numerically demonstrate the one-way mode transmission for the PC plate with finite superlattice by calculating the steady-state displacement fields under A modes source (or S modes source) in forward and backward direction, respectively. The results show that the incident waves from A modes source (or S modes source) are transformed into S modes waves (or A modes waves) after passing through the superlattice in the forward direction and the Lamb wave rejections in the backward direction are striking with a power extinction ratio of more than 1000. The present structure can be easily extended to two-dimensional PC plate and efficiently encourage practical studies of experimental realization which is believed to have much significance for one-way Lamb wave mode transmission.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
68.35.Iv Acoustical properties

A study on precipitation characteristics induced strength variation by nonlinear ultrasonic parameter

Chandan Mondal, Amretendu Mukhopadhyay, and Rajdeep Sarkar

J. Appl. Phys. 108, 124910 (2010); http://dx.doi.org/10.1063/1.3524526 (7 pages) | Cited 2 times

Online Publication Date: 29 December 2010

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Nonlinear ultrasonic study has been carried out to characterize the variation in strength induced by precipitation characteristics. An age hardenable aluminum alloy has been taken as a model alloy for the present investigation. It is shown that the second order nonlinear ultrasonic (NLU) parameter scales with strength property that in turn depends on coherent to incoherent precipitation phase transition. The observed variations in NLU parameter has been explained by modifying an existing dislocation-coherent precipitate interaction model for harmonics generation in order to account for a weaker dislocation-semicoherent precipitate interaction. The model proposed can in general be applicable to all precipitation hardenable alloy systems undergoing coherent to incoherent precipitate phase transition.
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81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
62.20.-x Mechanical properties of solids

Energy conversion in a glass-laser-induced blast wave in air

Bin Wang, Kimiya Komurasaki, Toshikazu Yamaguchi, Kohei Shimamura, and Yoshihiro Arakawa

J. Appl. Phys. 108, 124911 (2010); http://dx.doi.org/10.1063/1.3525561 (6 pages) | Cited 2 times

Online Publication Date: 30 December 2010

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Near-infrared solid laser-induced blast waves were investigated using a Q-switched Nd:glass laser oscillating at 1053 nm wavelength, up to 2.0 J/pulse laser energy Ei, and 33 ns pulse duration (full width at half maximum). Half-shadowgraph half-self-emission visualization elucidated laser detonation waves and blast waves. Laser output and transmission through the waves were measured using pairs of a photodetectors and energy meters. Results show volumetric absorption in this near-infrared region, which is mainly attributable to low inverse-Bremsstrahlung absorption coefficients at short wavelengths. Some input laser energy was converted into blast wave energy: 59% at Ei = 1.0 J/pulse, which approximates that of CO2 laser-induced blast waves.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
47.40.Rs Detonation waves
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