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1 Dec 2010

Volume 108, Issue 11, Articles (11xxxx)

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J. Appl. Phys. 108, 111101 (2010); http://dx.doi.org/10.1063/1.3503495 (21 pages)

R. C. Runkle, A. Bernstein, and P. E. Vanier
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Erratum: “Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures” [ J. Appl. Phys. 106, 023719 (2009) ]

V. N. Do and P. Dollfus

J. Appl. Phys. 108, 119901 (2010); http://dx.doi.org/10.1063/1.3512964 (1 page)

Online Publication Date: 7 December 2010

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Abstract Unavailable
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99.10.-x Errata and other corrections
68.35.Dv Composition, segregation; defects and impurities
05.60.-k Transport processes
61.48.Gh Structure of graphene
72.80.Vp Electronic transport in graphene
61.72.-y Defects and impurities in crystals; microstructure
72.80.Rj Fullerenes and related materials
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Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [ J. Appl. Phys. 108, 074502 (2010) ]

Seshadri Kolluri, Stacia Keller, David Brown, Geetak Gupta, Umesh K. Mishra, Steven P. DenBaars, and Siddharth Rajan

J. Appl. Phys. 108, 119902 (2010); http://dx.doi.org/10.1063/1.3514587 (1 page)

Online Publication Date: 9 December 2010

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85.30.Tv Field effect devices
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