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Journal of Applied Physics / Volume 108 / Issue 1 / ARTICLES / Device Physics

J. Appl. Phys. 108, 014511 (2010); http://dx.doi.org/10.1063/1.3459896 (9 pages)

How to use a nanowire to measure vibrational frequencies: Device simulator results

A. P. Horsfield1, Lianheng Tong1, Yeong-Ah Soh1, and P. A. Warburton2

1Department of Materials, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom
2London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom

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(Received 30 April 2010; accepted 4 June 2010; published online 15 July 2010)

Here we present a theoretical investigation of double well nanowire device that will be studied experimentally over a range of temperatures. Our nanowires are made from InAs with three InP barriers between which lie two InAs quantum wells. These wells have associated with them sharp electronic states between which electrons can tunnel. In the absence of a bias, resonant transmission of electrons is possible; but on applying a bias the levels in neighboring wells acquire different energies, thereby frustrating transmission. If the offset in energy is matched by the frequency of a phonon within the device that couples to the electrons in the wells then there will be a rise in current. We present here the results of simple device simulator calculations, on the basis of which the dimensions of an optimized device are determined.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. THE SIMULATOR
    1. Effective mass approximation calculations
    2. The potential profile
    3. The electron current
    4. Localized well states
  3. RESULTS
    1. Single barrier devices
    2. Double barrier devices
    3. Triple barrier devices
      1. Wire thickness
      2. Outer barriers
      3. Middle barrier
      4. Wells
      5. Influence of the bias on transmission
      6. Temperature
      7. Carrier density
    4. Variation in current with coupling to phonons
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

III-V semiconductors, indium compounds, nanowires, phonons, quantum well devices, resonant tunnelling devices, semiconductor quantum wells, semiconductor quantum wires

PACS

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3459896

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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