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Journal of Applied Physics / Volume 107 / Issue 9 / ARTICLES / Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

J. Appl. Phys. 107, 093502 (2010); http://dx.doi.org/10.1063/1.3399770 (5 pages)

An analysis of temperature-dependent photocurrent-spectra in photoconductive CuGaSe2 layers

S. Y. Yun1, K. J. Hong2, T. S. Jeong3, and C. J. Youn3

1Department of Chemistry Education, Chosun University, Gwangju 501-759, Republic of Korea
2Department of Physics, Chosun University, Gwangju 501-759, Republic of Korea
3School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea

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(Received 12 February 2010; accepted 20 March 2010; published online 3 May 2010)

The photocurrent (PC) variation in photoconductive CuGaSe2 (CGS) layers had been investigated as a function of temperature. Three peaks A, B, and C of the PC spectra were associated with the band-to-band transitions. Thus, the parameters of the crystal-field splitting (Δcr) and spin-orbit splitting (Δso) were directly acquired through the PC measurement. The Δcr and Δso were 0.0903 eV and 0.2130 eV at 10 K, respectively. From the relations of peak position and temperature, the temperature dependence of the band-gap energy is well described by Eg(T) = Eg(0)−(8.63×10−4)T2/(336+T). Also, the Eg(0) is estimated to be 1.7952, 1.8855, and 2.0985 eV at the valence-band states of Γ7(A), Γ6(B), and Γ7(C), respectively. However, the behavior of the PC was different from that generally observed in other semiconductors, the PC intensities decreased with decreasing temperature. From the relation of log Jph versus 1/T, where Jph is the PC density, two dominant levels were observed, one at high temperature and the other at low temperature. By comparing the results of the PC and photoluminescence, we confirmed that the activation energy of 82.7 meV at high temperatures is related to the dissociation energy of donor level due to Se vacancies. Consequently, we suggest that in photoconductive CGS layers, the trapping center due to native defects and impurities limits the PC signal with decreasing temperature.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL PROCEDURE
  3. RESULTS AND DISCUSSION
    1. Physical properties of PC spectra
    2. Temperature dependence of PC-peak positions
    3. Temperature dependence of PC-peak intensities
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

copper compounds, crystal field interactions, energy gap, gallium compounds, photoconductivity, photoluminescence, semiconductor epitaxial layers, spin-orbit interactions, ternary semiconductors, valence bands

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3399770

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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