Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

Carcelén, V.; Hidalgo, P.; Rodríguez-Fernández, J.; Dieguez, E.

doi:doi:10.1063/1.3275054

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Journal of Applied Physics / Volume 107 / Issue 9 / ARTICLES / Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

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J. Appl. Phys. 107, 093501 (2010); http://dx.doi.org/10.1063/1.3275054 (4 pages)

Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

V. Carcelén¹, P. Hidalgo², J. Rodríguez-Fernández¹, and E. Dieguez¹

¹Dpto. Física de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Univ. Autónoma de Madrid, 28049 Cantoblanco, Spain
²Dpto. Física de Materiales, Facultad de Ciencias Físicas, Univ. Complutense de Madrid, 28040 Madrid, Spain

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(Received 19 October 2009; accepted 13 November 2009; published online 3 May 2010)

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Abstract

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The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentrations (8 and 14 at. %) by the Bridgman oscillation method, in which one experiment has been carried out with a platinum (Pt) tube as the ampoule support. Pt also acts as a cold finger and reduces the growth velocity and enhances crystalline perfection. The grown single crystals have been studied with different analysis methods. The stoichiometry was confirmed by energy dispersive by x-ray and inductively coupled plasma mass spectroscopy analyses and it was found there is no incorporation of impurities in the grown crystal. The presence of Cd and Te vacancies was determined by cathodoluminescence studies. Electrical properties were assessed by I-V analysis and indicated higher resistive value (8.53×10⁸ Ω cm) for the crystal grown with higher zinc concentration (with Cd excess) compare to the other (3.71×10⁵ Ω cm).

Article Outline

INTRODUCTION
EXPERIMENTAL
1. Crystal growth
2. Characterization
RESULTS AND DISCUSSIONS
CONCLUSIONS

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KEYWORDS and PACS

Keywords

bismuth, cadmium compounds, cathodoluminescence, crystal growth from melt, electrical resistivity, II-VI semiconductors, impurities, semiconductor doping, stoichiometry, vacancies (crystal), X-ray chemical analysis, zinc compounds

PACS

81.10.Fq

Growth from melts; zone melting and refining
61.72.U-

Doping and impurity implantation
72.80.Ey

III-V and II-VI semiconductors
61.66.Bi

Elemental solids
61.66.Dk

Alloys
61.72.jd

Vacancies
78.60.Hk

Cathodoluminescence, ionoluminescence
82.80.Ej

X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3275054

PUBLICATION DATA

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0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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Appl. Phys. Lett. 90, 102121 (2007)APPLAB000090000010102121000001

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