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Journal of Applied Physics / Volume 107 / Issue 9 / ARTICLES / Plasmas and Electrical Discharges

J. Appl. Phys. 107, 093302 (2010); http://dx.doi.org/10.1063/1.3406153 (6 pages)

Effect of resonance in external radio-frequency circuit on very high frequency plasma discharge

Shahid Rauf, Zhigang Chen, and Ken Collins

Applied Materials, Inc., 974 E. Arques Avenue, M/S 81517 Sunnyvale, California 94085, USA

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(Received 10 January 2010; accepted 23 March 2010; published online 3 May 2010)

A fully electromagnetic plasma model for an asymmetric capacitively coupled plasma discharge is used to understand the interaction between the external radio-frequency (rf) distributed circuit and the plasma. The plasma is excited using a 150 MHz rf source connected to the top electrode, the bottom electrode is connected to a shorted transmission line, and the electrodes are separated from the chamber walls through dielectric rings. Under typical conditions, the electron density peaks in the center of the plasma chamber due to the standing electromagnetic wave and the rf current from the top electrode primarily returns through the bottom electrode. When the electrical length of the bottom transmission line is adjusted such that it presents a large (open-circuit) impedance at the plasma chamber interface, the rf return current shifts from the bottom electrode to the chamber wall. As a consequence, the peak in electron density also moves from the center of the chamber toward its outer periphery.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. THE COMPUTATIONAL MODEL
  3. COMPUTATIONAL RESULTS
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

circuit resonance, high-frequency discharges, plasma density, plasma sources

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3406153

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    S. Rauf and M. J. Kushner, J. Appl. Phys. 82, 2805 (1997)JAPIAU000082000006002805000001.


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