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Journal of Applied Physics / Volume 107 / Issue 9 / ARTICLES / Lasers, Optics, and Optoelectronics

J. Appl. Phys. 107, 093109 (2010); http://dx.doi.org/10.1063/1.3342673 (7 pages)

Impurity-related photoluminescence line shape asymmetry in GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach

Jurgis Kundrotas1, Aurimas Čerškus1, Gintaras Valušis1,2, Agne Johannessen3, Erik Johannessen3, Paul Harrison4, and Edmund H. Linfield4

1Semiconductor Physics Institute, A. Goštauto 11, Vilnius LT-01108, Lithuania
2Institute of Applied Research, Vilnius University, Saulėtekio Av. 9, Vilnius LT-10222, Lithuania
3Vestfold University College, Raveien 197, Borre 3184, Norway
4School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

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(Received 29 December 2009; accepted 2 February 2010; published online 10 May 2010)

The optical transitions in 20 nm wide silicon and beryllium δ-doped GaAs/AlAs multiple quantum wells with various doping levels were investigated at different excitation intensities. A fractional dimensionality model was used to describe the free hole-donor and free electron-acceptor transitions in the quantum wells. The measured photoluminescence spectra from samples of different doping level related to donor-impurity or acceptor-impurity induced effects in the photoluminescence lineshape, were compared within the framework of these model calculations. Both experimentally and theoretically it was shown that acceptor and donor related optical transitions and photoluminescence line shapes were related to the difference in the effective masses of holes and electrons. This effect also leads to a difference in the photoluminescence spectra in which the luminescence band for the donor related spectrum is narrower in comparison to the acceptor related spectrum.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. SAMPLES AND EXPERIMENTAL DETAILS
  3. EXPERIMENTAL PHOTOLUMINESCENCE SPECTRA
  4. THEORETICAL ANALYSIS AND DISCUSSION
  5. CONCLUSIONS

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KEYWORDS and PACS

Keywords

aluminium compounds, beryllium, gallium arsenide, III-V semiconductors, impurities, nanostructured materials, photoluminescence, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3342673

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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