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Journal of Applied Physics / Volume 107 / Issue 9 / ARTICLES / Lasers, Optics, and Optoelectronics

J. Appl. Phys. 107, 093107 (2010); http://dx.doi.org/10.1063/1.3360937 (7 pages)

Many-body design of highly strained GaInNAs electroabsorption modulators on GaInAs ternary substrates

Takeshi Fujisawa, Masakazu Arai, and Fumiyoshi Kano

NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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(Received 15 December 2009; accepted 10 February 2010; published online 4 May 2010)

Electroabsorption in highly strained GaInAs and GaInNAs quantum wells (QWs) grown on GaInAs or quasi-GaInAs substrates is investigated by using microscopic many-body theory. The effects of various parameters, such as strain, barrier height, substrate composition, and temperature are thoroughly examined. It is shown that the value of the absorption coefficient strongly depends on the depth of the QWs under large bias electric field due to the small overlap integral of wave functions between the conduction and valence bands. The use of GaInNAs QWs makes the strain in the well layer very small. Further, the effective quantum-well depth is increased in GaInNAs QWs due to the anticrossing interaction between the conduction and N-resonant bands, making it possible to obtain larger absorption coefficient under large bias electric fields without using wide-band gap materials for barriers.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. THEORY
  3. ELECTROABSORPTION IN HIGHLY STRAINED GaIn(N)As/(Al)GaInAs QWS
    1. Effects of substrate composition
    2. GaInAs/AlGaInAs QWs
    3. GaInNAs/GaInAs QWs
  4. EXTINCTION RATIO (ER) OF EAMs
  5. CONCLUSION

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KEYWORDS and PACS

Keywords

absorption coefficients, conduction bands, electroabsorption, electro-optical modulation, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, internal stresses, quantum well devices, semiconductor quantum wells, valence bands, wave functions

PACS

  • 42.79.Hp

    Optical processors, correlators, and modulators

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3360937

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. Ishikawa, Appl. Phys. Lett. 63, 712 (1993)APPLAB000063000006000712000001.

    M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schafer, F. Hohnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Ruhle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y. Egorov, and H. Riechert, Appl. Phys. Lett. 78, 3009 (2001)APPLAB000078000020003009000001.

    T. Fujisawa, M. Arai, T. Yamanaka, Y. Kondo, and F. Kano, J. Appl. Phys. 105, 113114 (2009)JAPIAU000105000011113114000001.

    I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)JAPIAU000089000011005815000001.

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