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Journal of Applied Physics / Volume 107 / Issue 5 / ARTICLES / Magnetism and Superconductivity

J. Appl. Phys. 107, 053905 (2010); doi:10.1063/1.3313920 (18 pages)

Present status of theoretical modeling the magnetoelectric effect in magnetostrictive-piezoelectric nanostructures. Part II: Magnetic and magnetoacoustic resonance ranges

M. I. Bichurin1, V. M. Petrov1, S. V. Averkin1, and E. Liverts2

1Institute of Electronic and Information Systems, Novgorod State University, B. S. Peterburgskaya St. 41, 173003 Veliky Novgorod, Russia
2Mechanical Engineering, Ben-Gurion University of the Negev, 84105 Beersheva, Israel

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(Received 30 April 2009; accepted 18 January 2010; published online 4 March 2010)

We presented here the theoretical analysis of high frequency magnetoelectric (ME) effects for a ferrite-piezoelectric bilayer and a detailed treatment for electric field induced resonance field shift for ferromagnetic resonance (FMR) in layered structures. ME effects in a single-crystal ferrite-piezoelectric bilayer in the magnetoelastic resonance region are considered. The theory predicts a giant ME effect at magnetoacoustic resonance. The enhancement in ME effect predicted by our theory arises from interaction between elastic modes and the uniform precession mode, resulting in magnetoelastic modes. The peak ME voltage coefficient appears at the coincidence of acoustic resonance and FMR frequencies. In our calculations, we suppose that the layer thickness is sufficiently large to neglect the influence of strain relaxation on average stresses in the structures that determine the ME voltage coefficient. The work presented here will certainly be of interest for the design and analysis of electrically controlled high-frequency devices. Microwave devices of magnetic type with electrical control have unique advantages over traditional ferrite and semiconductor analogs.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
    1. Influence of a constant electric field on magnetic susceptibility
    2. Calculation of ME coefficients
      1. Two-layer structure (bimorph)
      2. General theory: Macroscopic homogeneous model
      3. Contribution of flexural deformations and effect of substrate clamping
    3. ME susceptibility of ferrite-ferroelectric composites
    4. Enhancement in ME coupling in MAR region
      1. Bias field perpendicular to sample plane
      2. Tangentially magnetized film
      3. Effects of exchange interactions on MAR
      4. Electric field induced magnetic excitations
  2. CONCLUSIONS

EDITORIALLY RELATED

  1. Present status of theoretical modeling the magnetoelectric effect in magnetostrictive-piezoelectric nanostructures. Part I: Low frequency and electromechanical resonance ranges
    M. I. Bichurin et al.
    J. Appl. Phys. 107, 053904 (2010)JAPIAU000107000005053904000001

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KEYWORDS and PACS

Keywords

elasticity, ferrites, ferromagnetic resonance, lead compounds, lithium compounds, magnetoacoustic resonance, magnetoelastic effects, magnetoelectric effects, magnetostriction, nanostructured materials, nickel compounds, piezoelectric materials, yttrium compounds

PACS

  • 75.85.+t

    Magnetoelectric effects, multiferroics

  • 81.07.Bc

    Nanocrystalline materials

  • 77.65.-j

    Piezoelectricity and electromechanical effects

  • 75.80.+q

    Magnetomechanical effects, magnetostriction

  • 75.50.Gg

    Ferrimagnetics

  • 76.50.+g

    Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.3313920

PUBLICATION DATA

ISSN:

0021-8979 (print)  
1089-7550 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    I. Kornev, M. Bichurin, J. -P. Rivera, S. Gentil, A. G. M. Jansen, H. Schmid, and P. Wyder, Phys. Rev. B 62, 12247 (2000).

    M. I. Bichurin and V. M. Petrov, Sov. Phys. Tech. Phys. 33, 1389 (1988) (in Russian).

    A. S. Tatarenko, G. Srinivasan, and M. I. Bichurin, Appl. Phys. Lett. 88, 183507 (2006)APPLAB000088000018183507000001.

    Ce-Wen Nan, M. I. Bichurin, S. Dong, D. Viehland, and G. Srinivasan, J. Appl. Phys. 103, 031101 (2008)JAPIAU000103000003031101000001.

    M. I. Bichurin, I. A. Kornev, V. M. Petrov, A. S. Tatarenko, Yu. V. Kiliba, and G. Srinivasan, Phys. Rev. B 64, 094409 (2001).

    M. I. Bichurin, V. M. Petrov, Yu. V. Kiliba, and G. Srinivasan, Phys. Rev. B 66, 134404 (2002).

    S. Shastry, G. Srinivasan, M. I. Bichurin, V. M. Petrov, and A. S. Tatarenko, Phys. Rev. B 70, 064416 (2004).

    M. I. Bichurin, V. M. Petrov, O. V. Ryabkov, S. V. Averkin, and G. Srinivasan, Phys. Rev. B 72, 060408(R) (2005).


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