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Journal of Applied Physics / Volume 107 / Issue 4 / ARTICLES / Device Physics

J. Appl. Phys. 107, 044504 (2010); http://dx.doi.org/10.1063/1.3295902 (8 pages)

Modeling of light scattering from micro- and nanotextured surfaces

D. Dominé, F.-J. Haug, C. Battaglia, and C. Ballif

École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland

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(Received 14 July 2009; accepted 22 December 2009; published online 19 February 2010)

We present a calculation routine for the angular and spectral dependence of scattered light after transmission through textured interfaces. Based on a modified Rayleigh–Sommerfeld integral, the treatment requires only measured surface profiles, and the refractive indices of the two materials adjacent to the textured interface but no fitting parameter. For typical surface morphologies used in solar cell fabrication, the calculations correctly reproduce the angle resolved scattering at 543 nm and the total scattered light intensity in the spectral range from 400 to 2000 nm. The model is then applied to predict the behavior of the interface between ZnO and silicon in a thin film solar cell which is not experimentally accessible.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL
  3. MODEL
    1. Diffraction integral
    2. Normalization
    3. Angle resolved scattering
    4. Haze
  4. RESULTS AND DISCUSSION
    1. Surface morphology
    2. Light scattering properties
    3. Modeling of the interface ZnO/air
    4. Application to the interface ZnO/Si
  5. CONCLUSIONS

ERRATUM

  1. Erratum: “Modeling of light scattering from micro- and nanotextured surfaces” [J. Appl. Phys. 107, 044504 (2010)]
    D. Dominé et al.
    J. Appl. Phys. 107, 069901 (2010)JAPIAU000107000006069901000001

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KEYWORDS and PACS

Keywords

II-VI semiconductors, light scattering, light transmission, refractive index, silicon, solar cells, surface morphology, thin film devices, wide band gap semiconductors, zinc compounds

PACS

  • 88.40.jm

    Thin film III-V and II-VI based solar cells

  • 88.40.jj

    Silicon solar cells

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3295902

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    F. -J. Haug, T. Söderström, O. Cubero, V. Terrazoni-Daudrix, and C. Ballif, J. Appl. Phys. 106, 044502 (2009)JAPIAU000106000004044502000001.

    K. Jäger and M. Zeman, Appl. Phys. Lett. 95, 171108 (2009)APPLAB000095000017171108000001.


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