Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Choe, Minhyeok; Jo, Gunho; Maeng, Jongsun; Hong, Woong-Ki; Jo, Minseok; Wang, Gunuk; Park, Woojin; Lee, Byoung Hun; Hwang, Hyunsang; Lee, Takhee

doi:doi:10.1063/1.3298910

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Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress

Transmission line pulse measurements were used to investigate the reliability of the HfO2 dielectric under an electrostatic discharge event. Time-dependent dielectric breakdown of the gate oxide was characterized down to the microsecond time regime. The positive oxide-trapped charges Qot+ were observed beyond a certain electric field and the corresponding centroid evolution was examined. In the high-field stress regime, the field acceleration parameter of the HfO2 dielectric is smaller than tha...

Spectroscopic aspects of front transparent conductive films for a-Si thin film solar cells

This work demonstrates a method to optimize the indium tin oxide (ITO) thin films as front transparent electrode to maximize the efficiency of substrate type amorphous silicon (a-Si) based thin film solar cells. It shows that the total light intensity absorbed by the a-Si layer can be predicted by combining a multilayer optical simulation with the nonuniform solar spectrum and the spectroscopic response of the absorption coefficient of the a-Si film. Consequently, an optimized ITO film can be i...

We investigated the electronic properties of ZnO nanowire combined with the scaled high-k Al₂O₃ dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al₂O₃ dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler–Nordheim tunneling. The ZnO nanowire FETs with Al₂O₃ dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al₂O₃ dielectric layer thickness.

Article Outline

INTRODUCTION
EXPERIMENTAL SECTION
1. Fabrication of MOS structure with Al₂O₃ dielectric layer
2. Fabrication of ZnO nanowire field effect transistors
RESULTS AND DISCUSSION
1. Analysis of high- k Al₂O₃ dielectrics
2. Electrical properties of ZnO nanowire transistors
CONCLUSIONS

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KEYWORDS and PACS

Keywords

carrier mobility, electrical conductivity, high-k dielectric thin films, II-VI semiconductors, leakage currents, MIS structures, MOSFET, nanowires, semiconductor quantum wires, tunnelling, wide band gap semiconductors, zinc compounds

PACS

73.63.Nm

Quantum wires
73.40.Qv

Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk

Tunneling
77.55.D-

High-permittivity gate dielectric films
85.30.Tv

Field effect devices

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3298910

PUBLICATION DATA

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0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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