Annealing effects on a high-k lanthanum oxide film on Si (001) analyzed by aberration-corrected transmission electron microscopy/scanning transmission electron microscopy and electron energy loss spectroscopy

Inamoto, S.; Yamasaki, J.; Okunishi, E.; Kakushima, K.; Iwai, H.; Tanaka, N.

doi:doi:10.1063/1.3445874

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The annealing behavior of a lanthanum oxide thin film deposited on a silicon (001) substrate by electron-beam evaporation has been studied by aberration-corrected transmission electron microscopy (TEM), scanning TEM (STEM), and electron energy loss spectroscopy (EELS). We have developed a procedure for the precise measurement of thickness and interfacial roughness by taking advantage of features of aberration correction combined with the statistics of fluctuating crystalline edge positions. The results of the measurements and quantitative elemental analyses by STEM-EELS have revealed atomic diffusion and reactions during deposition and postdeposition annealing (PDA) at 300 and 500 °C. The channel mobility could be limited by Coulomb scattering before PDA, and by remote roughness scattering and remote phonon scattering after PDA at 500 °C. When we consider the large leakage current caused by oxygen defects in the as-deposited sample and the large equivalent oxide thickness of the thick Si-rich layer in the 500 °C-PDA sample, the gate properties of the 300 °C-PDA sample should be better than those of other samples, as shown by electrical measurements.

Article Outline

INTRODUCTION
EXPERIMENTAL
RESULTS
1. Thickness and interfacial roughness of the La-rich layer
2. Thickness of the Si-rich layer and roughness at the Si-rich/substrate interface
3. Elemental analyses of the dielectric films
DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

annealing, electron beam deposition, electron energy loss spectra, high-k dielectric thin films, lanthanum compounds, leakage currents, phonons, scanning-transmission electron microscopy, transmission electron microscopy, vacuum deposition

PACS

77.55.D-

High-permittivity gate dielectric films
79.20.Uv

Electron energy loss spectroscopy
68.55.aj

Insulators
63.22.Dc

Free films
73.61.Ng

Insulators
81.40.Gh

Other heat and thermomechanical treatments

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3445874

PUBLICATION DATA

ISSN

0021-8979 (print)

1089-7550 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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