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Journal of Applied Physics / Volume 107 / Issue 11 / ARTICLES / Device Physics

J. Appl. Phys. 107, 114505 (2010); http://dx.doi.org/10.1063/1.3431349 (5 pages)

Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators

P. S. Waggoner1, C. P. Tan2, and H. G. Craighead1

1School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
2Department of Biomedical Engineering, Cornell University, Ithaca, New York 14853, USA

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(Received 25 February 2010; accepted 21 April 2010; published online 2 June 2010)

Thin silicon dioxide films are deposited on nanomechanical resonators using atomic layer deposition (ALD), and their effect on the resonant properties of silicon nitride devices is studied as a function of thickness. We present experimental data and an analytical model for the effect of ALD growth and corroborate the model by studying resonators coated with atomic layer deposited aluminum nitride as well. As thicker films are deposited, device frequency shifts, become nonlinear with thickness, and quality factors drop significantly. Thin silicon dioxide coatings can be deposited on virtually any device surface to support surface chemistries commonly used in biochemical functionalization on glass surfaces. We also demonstrate that the efficiency of silane functionalization improves by 35% when low stress silicon nitride surfaces are coated with only 2.1 nm of atomic layer deposited silicon dioxide. This ALD modification technique should be particularly useful for nanomechanical resonant sensors since a thin, conformal film does not drastically reduce quality factor nor does it add excessive mass that would decrease device sensitivity.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL
  3. RESULTS AND DISCUSSION
    1. Characterization of coated resonators
    2. Effect on silanization
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

atomic layer deposition, dielectric resonators, nanoelectromechanical devices, Q-factor, silicon compounds, thin films

PACS

  • 85.85.+j

    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

  • 81.07.Oj

    Nanoelectromechanical systems (NEMS)

  • 85.50.-n

    Dielectric, ferroelectric, and piezoelectric devices

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3431349

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    R. K. Puurunen, J. Appl. Phys. 97, 121301 (2005)JAPIAU000097000012121301000001.

    N. V. Lavrik, M. J. Sepaniak, and P. G. Datskos, Rev. Sci. Instrum. 75, 2229 (2004)RSINAK000075000007002229000001.

    S. S. Verbridge, H. G. Craighead, and J. M. Parpia, Appl. Phys. Lett. 92, 013112 (2008)APPLAB000092000001013112000001.

    A. N. Cleland, M. Pophristic, and I. Ferguson, Appl. Phys. Lett. 79, 2070 (2001)APPLAB000079000013002070000001.


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