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J. Appl. Phys. 106, 064507 (2009); http://dx.doi.org/10.1063/1.3226659 (4 pages)

Avalanche photodiode punch-through gain determination through excess noise analysis

Han-Din Liu1, Huapu Pan1, Chong Hu1, Dion McIntosh1, Zhiwen Lu1, Joe Campbell1, Yimin Kang2, and Mike Morse2

1Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
2Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95054, USA

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(Received 15 June 2009; accepted 13 August 2009; published online 23 September 2009)

A new approach to determine the multiplication gain at punch-through for an avalanche photodiode with separate absorption and multiplication regions from excess noise measurement is discussed. Correctly determining the gain at punch-through is crucial for characterizing performance parameters of this type of avalanche photodiode. In order to illustrate the viability of this technique, in this work, a Ge on Si avalanche photodiode is analyzed. At a punch-through bias of 15 V, the multiplication gain was determined to be ∼ 1.54 while a simulation based on the device structure yielded a punch-through gain of 1.65.

© 2009 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. GAIN DETERMINATION ALGORITHM
  3. Ge ON Si WAVEGUIDE APDs
  4. CONCLUSIONS

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KEYWORDS and PACS

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

For access to fully linked references, you need to log in.
    T. Kaneda, H. Matsumoto, T. Sakurai, and T. Yamaoka, J. Appl. Phys. 47, 1605 (1976)JAPIAU000047000004001605000001.


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