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15 Aug 2009

Volume 106, Issue 4, Articles (04xxxx)

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J. Appl. Phys. 106, 041101 (2009); http://dx.doi.org/10.1063/1.3207769 (21 pages)

Robert C. Runkle, L. Eric Smith, and Anthony J. Peurrung
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Visible to near infrared conversion in Ce3+–Yb3+ Co-doped YAG ceramics

Jumpei Ueda and Setsuhisa Tanabe

J. Appl. Phys. 106, 043101 (2009); http://dx.doi.org/10.1063/1.3194310 (5 pages) | Cited 42 times

Online Publication Date: 17 August 2009

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In Ce3+–Yb3+ co-doped Y3Al5O12 (YAG) ceramics, possibility of quantum cutting mechanism converting one visible photon into two NIR photons with optimum quantum efficiency approaching 200% have been investigated. In this material, Yb3+ emissions due to the 2F5/2-2F7/2 in the range of 1 μm were observed upon the excitation of 5d level of Ce3+. In addition, excitation spectra of Yb3+ emission corresponded to that of Ce3+ emission completely. Lifetime of the 5d level of Ce3+ decreased with increasing Yb3+ content. These results indicate the energy transfer (ET) from the 5d levels of Ce3+ to the 5F5/2 level of Yb3+. In (Y0.945Ce0.005Yb0.05) 3Al5O12 sample, the directly measured quantum yield (QY) of Yb3+ emission upon the excitation of 5d level of Ce3+ was about 12% and lower than QY (96%) that estimated from the ET efficiency which was calculated with the measured lifetime of Ce3+.
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78.55.Hx Other solid inorganic materials
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

High-temperature lasing characteristics of randomly assembled ZnO nanowires with a ridge waveguide

H. Y. Yang, S. F. Yu, H. K. Liang, C. Pang, B. Yan, and T. Yu

J. Appl. Phys. 106, 043102 (2009); http://dx.doi.org/10.1063/1.3200960 (5 pages) | Cited 7 times

Online Publication Date: 19 August 2009

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High-temperature lasing characteristics of randomly assembled ZnO nanowires at ultraviolet wavelength are investigated. Lasing emission was observed from the randomly assembled ZnO nanowires for temperature up to 500 K. The corresponding lasing mechanism is attributed to the coherent random lasing action via the formation of closed-loop cavity modes. Furthermore, ridge waveguide lasers using the randomly assembled ZnO nanowires as the active medium were fabricated. It is found that the width of the ridge waveguides restricted the size of the closed-loop cavity modes such that the corresponding characteristic temperature can be increased by 10 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical conductance and transmission in bilayer graphene

H. M. Dong, J. Zhang, F. M. Peeters, and W. Xu

J. Appl. Phys. 106, 043103 (2009); http://dx.doi.org/10.1063/1.3200959 (6 pages) | Cited 2 times

Online Publication Date: 20 August 2009

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We present a theoretical study of the optoelectronic properties of bilayer graphene. The optical conductance and transmission coefficient are calculated using the energy-balance equation derived from a Boltzmann equation for an air/graphene/dielectric-wafer system. For short wavelengths (λ<0.2 μm), we obtain the universal optical conductance σ = e2/(2ℏ). Interestingly, there exists an optical absorption window in the wavelength range 10–100 μm, which is induced by different transition energies required for inter- and intra-band optical absorptions in the presence of the Moss–Burstein effect. As a result, the position and width of this absorption window depend sensitively on temperature, carrier density, and sample mobility of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.80.Sk Insulators
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance

Propagation characteristics of channel plasmon polaritons supported by a dielectric filled trench in a real metal

Triranjita Srivastava and Arun Kumar

J. Appl. Phys. 106, 043104 (2009); http://dx.doi.org/10.1063/1.3197362 (5 pages) | Cited 5 times

Online Publication Date: 21 August 2009

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We examine the propagation characteristics of channel plasmon polaritons supported by V-grooves and trenches embedded in a real metal. A dielectric filled trench is found to have superior characteristics as compared to a V-groove in terms of mode confinement and propagation length. A substantial decrease in the cutoff depth of the trench due to dielectric has also been observed, making the miniaturized optical components based on such waveguides possible.
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42.79.Gn Optical waveguides and couplers
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

PbTe and SnTe quantum dot precipitates in a CdTe matrix fabricated by ion implantation

E. Kaufmann, T. Schwarzl, H. Groiss, G. Hesser, F. Schäffler, L. Palmetshofer, G. Springholz, and W. Heiss

J. Appl. Phys. 106, 043105 (2009); http://dx.doi.org/10.1063/1.3204499 (5 pages) | Cited 2 times

Online Publication Date: 25 August 2009

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We present rock-salt IV-VI semiconductor quantum dots fabricated by implantation of Pb+, Te+, or Sn+ ions into epitaxial zinc-blende CdTe layers. PbTe and SnTe nanoprecipitates of high structural quality are formed after implantation by thermal annealing due to the immiscibility of dot and matrix materials. For samples implanted only with Pb+, intense continuous-wave photoluminescence peaked at 1.6 μm at 300 K is found. In contrast, for PbTe quantum dots fabricated by coimplantation of Pb+ and Te+, the 300 K emission peak is observed at 2.9 μm, indicating luminescence from much larger dots.
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68.65.Hb Quantum dots (patterned in quantum wells)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Gh Other heat and thermomechanical treatments

Effect of laser fluence on yeast cell viability in laser-assisted cell transfer

Yafu Lin, Yong Huang, Gaoyan Wang, Tzeng-Rong J. Tzeng, and Douglas B. Chrisey

J. Appl. Phys. 106, 043106 (2009); http://dx.doi.org/10.1063/1.3202388 (7 pages) | Cited 8 times

Online Publication Date: 26 August 2009

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Matrix-assisted pulsed-laser evaporation direct-write (MAPLE DW) has been emerging as a promising biological construct fabrication technique. The post-transfer cell viability in MAPLE DW depends on various operation conditions such as the applied laser fluence; unfortunately, the effect of laser fluence on the post-transfer cell viability has not been well elucidated. This work aims to study the effect of laser fluence on the post-transfer cell viability and the cell recovery ability in MAPLE DW of yeast cells (Saccharomyces cerevisiae). It has been observed that (1) yeast cell viability decreases as the laser fluence increases from 85 to around 1500 mJ/cm2 and (2) some of the MAPLE DW process-induced cell damage is reversible. The post-transfer yeast cell recovery is a function of laser fluence; however, this dependence relationship is not monotonic. Future work is needed to better understand the physical and chemical mechanisms of the above observations.
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87.50.W- Optical/infrared radiation effects
42.62.-b Laser applications

Acousto-optic interaction in photonic crystals with defects

Xiao-Shi Qian, Jing-Ping Li, Ming-hui Lu, Yan-qing Lu, and Yan-feng Chen

J. Appl. Phys. 106, 043107 (2009); http://dx.doi.org/10.1063/1.3204018 (5 pages) | Cited 4 times

Online Publication Date: 26 August 2009

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The acousto-optic (AO) effects of photonic crystals (PCs) were studied. Both the PCs’ periodicity and their index distribution could be modulated instantly by the propagating acoustic wave. As a consequence, the PCs’ band structure becomes tunable. In addition to band gap shift in an ideal PC, AO frequency modulation was observed in a PC with single defect, which is quite different from normal AO tunable filters and gives rise to some interesting applications. Furthermore, in dual-defect situation, synchronized and desynchronized modulations were realized at different acoustic wavelengths. Interesting phenomena such as dual frequency sweeping and dual frequency Q-switching were demonstrated.
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42.70.Qs Photonic bandgap materials
42.55.Tv Photonic crystal lasers and coherent effects
42.60.Fc Modulation, tuning, and mode locking

Widely tunable lifetimes for donor-acceptor pair states created by displacing an intrinsic atom in photonic crystals

S. Nojima and M. Nakahata

J. Appl. Phys. 106, 043108 (2009); http://dx.doi.org/10.1063/1.3204175 (4 pages) | Cited 2 times

Online Publication Date: 26 August 2009

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This paper theoretically investigates the formation processes of intrinsic defect states in two-dimensional photonic crystals. We observe two types of defect states—what could be called the donor and acceptor states—created simultaneously by merely displacing a single rod atom from its regular site. The localization of light in the vicinity of these states is reasonably explained in terms of the stability of light around them. Finally, we demonstrate that the lifetimes of light trapped at these states can be tuned in a wide range by adjusting the position of the displaced rod appropriately.
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71.55.-i Impurity and defect levels
42.70.Qs Photonic bandgap materials
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