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15 Aug 2009

Volume 106, Issue 4, Articles (04xxxx)

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J. Appl. Phys. 106, 041101 (2009); http://dx.doi.org/10.1063/1.3207769 (21 pages)

Robert C. Runkle, L. Eric Smith, and Anthony J. Peurrung
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Structural stability and compressibility of group IV transition metals-based bulk metallic glasses under high pressure

Andrew K. Stemshorn and Yogesh K. Vohra

J. Appl. Phys. 106, 046101 (2009); http://dx.doi.org/10.1063/1.3204444 (3 pages) | Cited 1 time

Online Publication Date: 20 August 2009

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High-pressure x-ray diffraction studies have been carried out on the two group IV transition metals-based bulk metallic glasses (BMGs) Zr57Cu15.4Ni12.6Al10Nb5 and Ti42Zr24Cu15.5Ni14.5Be4 to a pressure of 30 GPa at ambient temperature in a diamond anvil cell. Image plate x-ray diffraction studies under high pressure were carried out at a synchrotron source and the two BMG diffraction bands can be followed to the highest pressure using an internal copper pressure standard. The amorphous phase is observed to be stable to the highest static pressure of 30 GPa suggesting that the phase change observed in dynamical pressure experiments is related to an increase in temperature. The measured bulk modulus (B0) and its pressure derivative (B′) are 118 GPa and 3.11 for Zr-based BMG and 116 GPa and 2.84 for Ti-based BMG. The measured bulk modulus for BMG’s by x-ray diffraction technique is consistent with the ultrasonic measurements. The decompression data reveal an increase in density by 3%–4% at ambient condition after pressure cycling to 30 GPa indicating reduction in excess free volume.
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61.43.Fs Glasses
62.50.-p High-pressure effects in solids and liquids
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli

Vapor-solid-solid radial growth of Ge nanowires

C. B. Li, K. Usami, H. Mizuta, and S. Oda

J. Appl. Phys. 106, 046102 (2009); http://dx.doi.org/10.1063/1.3204471 (3 pages) | Cited 3 times

Online Publication Date: 20 August 2009

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The radial growth of Ge nanowire via chemical vapor deposition is discussed in detail. Vapor-solid-solid (VSS) growth mechanism is believed to dominate the nanowire growth in radial direction, which contributes to the increase of the diameter of nanowire. After the Au catalysts on the tip are consumed for a long growth time, the nanowire with a rough surface will be grown due to the selective VSS radial growth.
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68.65.La Quantum wires (patterned in quantum wells)
68.35.bg Semiconductors
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.16.-c Methods of micro- and nanofabrication and processing
81.07.Vb Quantum wires

Localized ferromagnetic resonance force microscopy in Permalloy-cobalt films

E. Nazaretski, Yu. Obukhov, I Martin, D. V. Pelekhov, K. C. Cha, E. A. Akhadov, P. C. Hammel, and R. Movshovich

J. Appl. Phys. 106, 046103 (2009); http://dx.doi.org/10.1063/1.3204029 (3 pages)

Online Publication Date: 21 August 2009

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We report ferromagnetic resonance force microscopy (FMRFM) experiments on a juxtaposed continuous films of Permalloy and cobalt. Our studies demonstrate the capability of FMRFM to perform local spectroscopy of different ferromagnetic materials. Theoretical analysis of the uniform resonance mode near the edge of the film agrees quantitatively with experimental data. Our experiments demonstrate the micron scale lateral resolution in determining local magnetic properties in continuous ferromagnetic samples.
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75.70.Ak Magnetic properties of monolayers and thin films
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Cc Other ferromagnetic metals and alloys
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Bb Fe and its alloys

Modulation of the band offsets between La2Hf2O7 and fully depleted SiGe on insulator by NH3 treatment

Ligang Gao, Yidong Xia, Hongxuan Guo, Bo Xu, Zhiguo Liu, and Jiang Yin

J. Appl. Phys. 106, 046104 (2009); http://dx.doi.org/10.1063/1.3204459 (3 pages) | Cited 1 time

Online Publication Date: 21 August 2009

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Band alignments of La2Hf2O7 (LHO) films grown on fully depleted SiGe on insulator (FD SGOI) substrates have been investigated by x-ray photoelectron technique. The valence and conduction band offsets for LHO/FD SGOI systems are determined to be 3.25 and 1.49 eV, respectively. Such asymmetric band alignment can be modulated to be quite symmetric by the surface nitridation of FD SGOI using NH3 treatment. The impact of NH3-treatment temperature on band offsets is also investigated.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
79.60.Jv Interfaces; heterostructures; nanostructures
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
68.55.-a Thin film structure and morphology

Shock and release wave speed of an alumina epoxy composite

Christopher Neel and Naresh Thadhani

J. Appl. Phys. 106, 046105 (2009); http://dx.doi.org/10.1063/1.3204468 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2009

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A filled epoxy with 43% by volume of disk-shaped Al2O3 particles is used to investigate the effect of high-aspect ratio (4:1) particle shape on composite shock and release response. Stress profiles are recorded during a symmetric impact experiment performed at an impact velocity of 569 m/s. The shock and release velocities are respectively observed to be 3511 and 5685 m/s, which agrees with data previously reported, indicating that particle shape has no effect on the Hugoniot or the isentrope. However, the high-aspect ratio particles are found to increase the acoustic wave speeds, especially in shear, and also to increase shock wave dispersion, as indicated by the measured rise time of the stress profile.
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68.35.Gy Mechanical properties; surface strains
62.50.Ef Shock wave effects in solids and liquids
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Entrapment of magnetic microcrystals for on-chip electron spin resonance studies

N. Groll, S. Bertaina, M. Pati, N. S. Dalal, and I. Chiorescu

J. Appl. Phys. 106, 046106 (2009); http://dx.doi.org/10.1063/1.3207774 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2009

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On-chip electron spin resonance (ESR) of magnetic molecules requires the ability to precisely position nanosized samples in antinodes of the electromagnetic field for maximal magnetic interaction. A method is developed to entrap microcrystals containing spins in a well defined location on a substrate’s surface. Traditional cavity ESR measurements are then performed on a mesoscopic crystal at 34 GHz. Polycrystalline diluted Cr5+ spins are entrapped as well and measured while approaching the lower limit of the ESR sensitivity. This method suggests the feasibility of on-chip ESR measurements at dilution refrigerator temperatures by enabling the positioning of samples atop an on-chip superconducting cavity.
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76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
74.78.Na Mesoscopic and nanoscale systems
74.25.N- Response to electromagnetic fields
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