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15 Nov 2009

Volume 106, Issue 10, Articles (10xxxx)

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J. Appl. Phys. 106, 103913 (2009); http://dx.doi.org/10.1063/1.3260240 (5 pages)

P. Krone, D. Makarov, T. Schrefl, and M. Albrecht
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Tunable propagation of light through a coupled-bent dielectric-loaded plasmonic waveguides

Hong-Son Chu, Wei-Bin Ewe, and Er-Ping Li

J. Appl. Phys. 106, 106101 (2009); http://dx.doi.org/10.1063/1.3253738 (3 pages) | Cited 4 times

Online Publication Date: 16 November 2009

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We numerically show that it is easy to tune, both passively and actively, the transmission power delivered at different output ports of two coupled-bent dielectric-loaded plasmonic waveguides by varying the gap distance and refractive index of driven material between two dielectric stripes. We also investigate the near-field intensity to demonstrate that the power transmitted at different output ports can be varied to realize either equal or unequal levels, depending on the design specifications. A simple expression is proposed to predict the power transmitted to different output ports for a set of given dimensions and refractive index of the driven material.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

Evidence of atomic-scale arsenic clustering in highly doped silicon

S. Duguay, F. Vurpillot, T. Philippe, E. Cadel, R. Lardé, B. Deconihout, G. Servanton, and R. Pantel

J. Appl. Phys. 106, 106102 (2009); http://dx.doi.org/10.1063/1.3257178 (3 pages) | Cited 5 times

Online Publication Date: 24 November 2009

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Low temperature (675 °C) epitaxial in situ doped Si layers (As, 1.5 at. %) were analyzed by atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer. The spatial distribution of As atoms in this layer was obtained by APT, and the distance distribution between first nearest neighbors between As atoms was studied. The result shows that the distribution of As atoms is nonhomogeneous, indicating clustering. Those clusters, homogeneously distributed in the volume, are found to be very small (a few atoms) with a high number density and contain more than 60% of the total number of As atoms.
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61.72.sh Impurity distribution
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.75.Qr Phase separation and segregation in semiconductors
64.75.St Phase separation and segregation in thin films

Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2

F. L. Bregolin, M. Behar, U. S. Sias, S. Reboh, J. Lehmann, L. Rebohle, and W. Skorupa

J. Appl. Phys. 106, 106103 (2009); http://dx.doi.org/10.1063/1.3262627 (3 pages) | Cited 2 times

Online Publication Date: 24 November 2009

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Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperature (RT) Ge implantation into a SiO2 matrix followed by a high temperature anneal. In the present work, we have used a novel experimental approach: we have performed the Ge implantation at high temperature (Ti) and subsequently a high temperature anneal at 900 °C in order to grow the Ge NCs. By performing the implantation at Ti = 350 °C, the electrical stability of the MOSLEDs were enhanced, as compared to the ones obtained from RT implantation. Moreover, by changing the implantation fluence from Φ = 0.5×1016 and 1.0×1016 Ge/cm2 we have observed a blueshift in the EL emission peak. The results show that the electrical stability of the hot implanted devices is higher than the ones obtained by RT implantation.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.60.Fi Electroluminescence
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.up Other materials
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Jb Light-emitting devices

Pyroelectric surface charge in hydroxyapatite ceramics

S. A. M. Tofail, C. Baldisserri, D. Haverty, J. B. McMonagle, and J. Erhart

J. Appl. Phys. 106, 106104 (2009); http://dx.doi.org/10.1063/1.3262628 (3 pages) | Cited 4 times

Online Publication Date: 30 November 2009

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Surface charge of pyroelectric nature is measured in poled hydroxyapatite ceramics. The average pyroelectric constant can range from 0.1 to 40 nC cm−2 K−1 at temperatures of 300–500 °C, while at 27–60 °C the value ranges from 15 to 64 nC cm−2 K−1. The higher temperature values are comparable to conventional pyroelectric ceramics such as LiTaO3 or PZT. The lower temperature values are four orders higher than those observed in bone and tendon.
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77.70.+a Pyroelectric and electrocaloric effects
77.22.Ej Polarization and depolarization
87.85.J- Biomaterials
73.40.-c Electronic transport in interface structures
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