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Journal of Applied Physics / Volume 105 / Issue 8 / ELECTRONIC STRUCTURE AND TRANSPORT

J. Appl. Phys. 105, 083715 (2009); doi:10.1063/1.3110075 (4 pages)

Thermal emittance and response time measurements of a GaN photocathode

Ivan V. Bazarov1, Bruce M. Dunham1, Xianghong Liu1, Matt Virgo2, Amir M. Dabiran3, Fay Hannon4, and Hisham Sayed4

1Cornell Laboratory for Accelerator-Based Sciences, Cornell University, Ithaca, New York 14853, USA
2Argonne National Laboratory, Argonne, Illinois 60439, USA
3SVT Associates, Eden Prairie, Minnesota 55344, USA
4Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606, USA

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(Received 30 January 2009; accepted 26 February 2009; published online 23 April 2009)

We present the measurements of thermal emittance and response time for a GaN photocathode illuminated with 5 ps pulses at 260 nm wavelength. The thermal emittance was measured downstream of a 100 kV dc gun using a solenoid scan with a wire scanner and a beam viewscreen and was found to be 1.35±0.11 mm mrad normalized rms emittance per 1 mm rms of illuminated spot size. The response time of the photoemitted electrons was evaluated using a deflecting mode rf cavity synchronized to the laser pulses and was found to be prompt within the time resolution capability of our setup.

© 2009 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL SETUP
  3. RESULTS
  4. DISCUSSION

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, photocathodes, photoemission, wide band gap semiconductors

PACS

  • 85.60.Ha

    Photomultipliers; phototubes and photocathodes

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.3110075

PUBLICATION DATA

ISSN:

0021-8979 (print)  
1089-7550 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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